Abstract
GaN nanodisks, which can be used as nanoscale dielectric resonators for compact photonic nanodevices, were grown by using hydride vapor-phase epitaxy with growth interruption. Growth interruption enhanced surface migration of species and controlled growth interruption allowed the formation of GaN nanodisks at a growth temperature of 1050 °C and even at a growth temperature as low as 510 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 1646-1649 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 53 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Sept 2008 |
Keywords
- GaN
- Hydride vapor-phase epitaxy
- Nanodisk