Millisecond positive bias recovery of negative bias illumination stressed amorphous InGaZnO thin-film transistors

This letter demonstrates a short-time pulsed positive bias recovery (PBR) of the degraded performance of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) under negative bias illumination stress (NBIS) with the IGZO of In: Ga: Zn =3: 2: 1 atomic ratio. By applying simultaneous gate and drain voltages (V_G = V_D = 35_V) for a very short duration (10^-3 s) after NBIS, the performance could be completely recovered. TCAD simulation confirms that the temperature increases up to 410 °C by 35 V PBR, which accelerates the neutralization of generated interface charges and bulk donors by capturing electrons and then relax back to the pristine state.