MOCVD of TIO2 thin films on OTS modified SI(100) substrates by micro-contact printing (μCP): Selective growth and new characterization technique with micro-raman spectroscopy

B. C. Kang; J. H. Lee; D. Y. Jung; A. Devi; R. Bhakta; R. A. Fischer; S. H. Hong; J. H. Boo

MOCVD of TIO₂ thin films on OTS modified SI(100) substrates by micro-contact printing (μCP): Selective growth and new characterization technique with micro-raman spectroscopy

B. C. Kang
, J. H. Lee
, D. Y. Jung
, A. Devi
, R. Bhakta
, R. A. Fischer
, S. H. Hong
, J. H. Boo

Research output: Contribution to conference › Paper › peer-review

Abstract

The selective deposition of anatase TiO₂2 thin films on Si(100) substrates by combination of micro-contact printing (μCP) and metal-organic chemical vapor deposition (MOCVD) is carried out. For preparing the patterned Si(100) substrates, μCP method was adapted to make self-assembled monolayers (SAMs) using an organic molecule such as octadecyltrichlorosilane (OTS). This was followed by the deposition of TiO₂ thin films on OTS patterned Si(100) substrates with [Ti(OⁱPr)₂(tbaoac)₂] (tbaoac = tertiarybutyl-acetoacetate). Selective growth of TiO₂ was achieved in a home-built horizontal MOCVD reactor in the temperature range of 300 - 500°C and deposition pressure of 3 × 10^-2 Torr. We could prove the selectivity of TiO₂ thin films using optical microscope (OM), scanning electron microscope (SEM), and atomic force microscope (AFM) images as well as micro-Raman spectroscopic analysis.

Original language	English
Pages	320-325
Number of pages	6
Publication status	Published - 2005
Event	15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, Germany Duration: 5 Sept 2005 → 9 Sept 2005

Conference

Conference	15th European Conference on Chemical Vapor Deposition, EUROCVD-15
Country/Territory	Germany
City	Bochum
Period	5/09/05 → 9/09/05

Cite this

Kang, B. C., Lee, J. H., Jung, D. Y., Devi, A., Bhakta, R., Fischer, R. A., Hong, S. H., & Boo, J. H. (2005). MOCVD of TIO₂ thin films on OTS modified SI(100) substrates by micro-contact printing (μCP): Selective growth and new characterization technique with micro-raman spectroscopy. 320-325. Paper presented at 15th European Conference on Chemical Vapor Deposition, EUROCVD-15, Bochum, Germany.

@conference{31953f0cb1cf4f6898659432ef16b8a5,

title = "MOCVD of TIO2 thin films on OTS modified SI(100) substrates by micro-contact printing (μCP): Selective growth and new characterization technique with micro-raman spectroscopy",

abstract = "The selective deposition of anatase TiO22 thin films on Si(100) substrates by combination of micro-contact printing (μCP) and metal-organic chemical vapor deposition (MOCVD) is carried out. For preparing the patterned Si(100) substrates, μCP method was adapted to make self-assembled monolayers (SAMs) using an organic molecule such as octadecyltrichlorosilane (OTS). This was followed by the deposition of TiO2 thin films on OTS patterned Si(100) substrates with [Ti(OiPr)2(tbaoac)2] (tbaoac = tertiarybutyl-acetoacetate). Selective growth of TiO2 was achieved in a home-built horizontal MOCVD reactor in the temperature range of 300 - 500°C and deposition pressure of 3 × 10-2 Torr. We could prove the selectivity of TiO2 thin films using optical microscope (OM), scanning electron microscope (SEM), and atomic force microscope (AFM) images as well as micro-Raman spectroscopic analysis.",

author = "Kang, \{B. C.\} and Lee, \{J. H.\} and Jung, \{D. Y.\} and A. Devi and R. Bhakta and Fischer, \{R. A.\} and Hong, \{S. H.\} and Boo, \{J. H.\}",

year = "2005",

language = "English",

pages = "320--325",

note = "15th European Conference on Chemical Vapor Deposition, EUROCVD-15 ; Conference date: 05-09-2005 Through 09-09-2005",

}

Kang, BC, Lee, JH, Jung, DY, Devi, A, Bhakta, R, Fischer, RA, Hong, SH & Boo, JH 2005, 'MOCVD of TIO₂ thin films on OTS modified SI(100) substrates by micro-contact printing (μCP): Selective growth and new characterization technique with micro-raman spectroscopy', Paper presented at 15th European Conference on Chemical Vapor Deposition, EUROCVD-15, Bochum, Germany, 5/09/05 - 9/09/05 pp. 320-325.

MOCVD of TIO₂ thin films on OTS modified SI(100) substrates by micro-contact printing (μCP): Selective growth and new characterization technique with micro-raman spectroscopy. / Kang, B. C.; Lee, J. H.; Jung, D. Y. et al.
2005. 320-325 Paper presented at 15th European Conference on Chemical Vapor Deposition, EUROCVD-15, Bochum, Germany.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - MOCVD of TIO2 thin films on OTS modified SI(100) substrates by micro-contact printing (μCP)

T2 - 15th European Conference on Chemical Vapor Deposition, EUROCVD-15

AU - Kang, B. C.

AU - Lee, J. H.

AU - Jung, D. Y.

AU - Devi, A.

AU - Bhakta, R.

AU - Fischer, R. A.

AU - Hong, S. H.

AU - Boo, J. H.

PY - 2005

Y1 - 2005

N2 - The selective deposition of anatase TiO22 thin films on Si(100) substrates by combination of micro-contact printing (μCP) and metal-organic chemical vapor deposition (MOCVD) is carried out. For preparing the patterned Si(100) substrates, μCP method was adapted to make self-assembled monolayers (SAMs) using an organic molecule such as octadecyltrichlorosilane (OTS). This was followed by the deposition of TiO2 thin films on OTS patterned Si(100) substrates with [Ti(OiPr)2(tbaoac)2] (tbaoac = tertiarybutyl-acetoacetate). Selective growth of TiO2 was achieved in a home-built horizontal MOCVD reactor in the temperature range of 300 - 500°C and deposition pressure of 3 × 10-2 Torr. We could prove the selectivity of TiO2 thin films using optical microscope (OM), scanning electron microscope (SEM), and atomic force microscope (AFM) images as well as micro-Raman spectroscopic analysis.

AB - The selective deposition of anatase TiO22 thin films on Si(100) substrates by combination of micro-contact printing (μCP) and metal-organic chemical vapor deposition (MOCVD) is carried out. For preparing the patterned Si(100) substrates, μCP method was adapted to make self-assembled monolayers (SAMs) using an organic molecule such as octadecyltrichlorosilane (OTS). This was followed by the deposition of TiO2 thin films on OTS patterned Si(100) substrates with [Ti(OiPr)2(tbaoac)2] (tbaoac = tertiarybutyl-acetoacetate). Selective growth of TiO2 was achieved in a home-built horizontal MOCVD reactor in the temperature range of 300 - 500°C and deposition pressure of 3 × 10-2 Torr. We could prove the selectivity of TiO2 thin films using optical microscope (OM), scanning electron microscope (SEM), and atomic force microscope (AFM) images as well as micro-Raman spectroscopic analysis.

UR - https://www.scopus.com/pages/publications/31744447885

M3 - Paper

AN - SCOPUS:31744447885

SP - 320

EP - 325

Y2 - 5 September 2005 through 9 September 2005

ER -

MOCVD of TIO₂ thin films on OTS modified SI(100) substrates by micro-contact printing (μCP): Selective growth and new characterization technique with micro-raman spectroscopy

Abstract

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