Molecular beam epitaxial growth of InAs quantum dots on (100) InAIAs/InP emitting at near infrared wavelength

B. H. Koo; J. H. Chang; H. Making; T. Hanada; T. Yao; Y. G. Park; D. Shindo; J. H. Lee; C. G. Lee; Y. D. Kim

Molecular beam epitaxial growth of InAs quantum dots on (100) InAIAs/InP emitting at near infrared wavelength

B. H. Koo, J. H. Chang, H. Making, T. Hanada, T. Yao, Y. G. Park, D. Shindo, J. H. Lee, C. G. Lee, Y. D. Kim

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

InAs quantum dots (QDs) on In_0.52Al_0.48As layer lattice matched to (100) InP substrates were grown by solid-source molecular beam epitaxy. We performed a study on the structural and optical properties of InAs QDs with 0.8 eV (1.55 μm) emission by using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM image showed clear existence of the QDs. The PL showed ∼0.8 eV (∼1.55 μm) emission from dislocation-free InAs QDs with height of ∼3.6 nm and base width of ∼20 nm. Activation energies obtained from temperature dependence of the integrated PL intensity were also similar to the reported values, confirming the formation of InAs QDs.

Original language	English
Pages (from-to)	S246-S249
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

InAs quantum dots
MBE
PL
TEM

Cite this

@article{e328d6c3eb7a4bc397814d500ce67d25,

title = "Molecular beam epitaxial growth of InAs quantum dots on (100) InAIAs/InP emitting at near infrared wavelength",

abstract = "InAs quantum dots (QDs) on In0.52Al0.48As layer lattice matched to (100) InP substrates were grown by solid-source molecular beam epitaxy. We performed a study on the structural and optical properties of InAs QDs with 0.8 eV (1.55 μm) emission by using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM image showed clear existence of the QDs. The PL showed ∼0.8 eV (∼1.55 μm) emission from dislocation-free InAs QDs with height of ∼3.6 nm and base width of ∼20 nm. Activation energies obtained from temperature dependence of the integrated PL intensity were also similar to the reported values, confirming the formation of InAs QDs.",

keywords = "InAs quantum dots, MBE, PL, TEM",

author = "Koo, {B. H.} and Chang, {J. H.} and H. Making and T. Hanada and T. Yao and Park, {Y. G.} and D. Shindo and Lee, {J. H.} and Lee, {C. G.} and Kim, {Y. D.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S246--S249",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

}

TY - JOUR

T1 - Molecular beam epitaxial growth of InAs quantum dots on (100) InAIAs/InP emitting at near infrared wavelength

AU - Koo, B. H.

AU - Chang, J. H.

AU - Making, H.

AU - Hanada, T.

AU - Yao, T.

AU - Park, Y. G.

AU - Shindo, D.

AU - Lee, J. H.

AU - Lee, C. G.

AU - Kim, Y. D.

PY - 2003/2

Y1 - 2003/2

N2 - InAs quantum dots (QDs) on In0.52Al0.48As layer lattice matched to (100) InP substrates were grown by solid-source molecular beam epitaxy. We performed a study on the structural and optical properties of InAs QDs with 0.8 eV (1.55 μm) emission by using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM image showed clear existence of the QDs. The PL showed ∼0.8 eV (∼1.55 μm) emission from dislocation-free InAs QDs with height of ∼3.6 nm and base width of ∼20 nm. Activation energies obtained from temperature dependence of the integrated PL intensity were also similar to the reported values, confirming the formation of InAs QDs.

AB - InAs quantum dots (QDs) on In0.52Al0.48As layer lattice matched to (100) InP substrates were grown by solid-source molecular beam epitaxy. We performed a study on the structural and optical properties of InAs QDs with 0.8 eV (1.55 μm) emission by using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM image showed clear existence of the QDs. The PL showed ∼0.8 eV (∼1.55 μm) emission from dislocation-free InAs QDs with height of ∼3.6 nm and base width of ∼20 nm. Activation energies obtained from temperature dependence of the integrated PL intensity were also similar to the reported values, confirming the formation of InAs QDs.

KW - InAs quantum dots

KW - MBE

KW - PL

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=0037307099&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037307099

SN - 0374-4884

VL - 42

SP - S246-S249

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Molecular beam epitaxial growth of InAs quantum dots on (100) InAIAs/InP emitting at near infrared wavelength

Abstract

Keywords

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