Molybdenum Thin Film Formation from Molybdenum Nitride Deposited by Plasma-enhanced Atomic Layer Deposition with Hydrogen-permeable Mechanical Capping Layer

Jeong Hyeon Park; Ye Won Kim; Myeong Ho Kim; Jin Sik Kim; Woojin Jeon

doi:10.1021/acsaelm.3c00711

Molybdenum Thin Film Formation from Molybdenum Nitride Deposited by Plasma-enhanced Atomic Layer Deposition with Hydrogen-permeable Mechanical Capping Layer

Jeong Hyeon Park
, Ye Won Kim
, Myeong Ho Kim
, Jin Sik Kim
, Woojin Jeon

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this study, we developed a Mo metal thin film deposition process consisting of two steps: Mo₂N thin film deposition using plasma-enhanced atomic layer deposition, followed by rapid thermal annealing. The mechanism underlying the reduction of Mo₂N during the post-deposition annealing was investigated. Agglomeration during the reduction of Mo₂N to Mo was successfully suppressed by using a hydrogen-permeable mechanical capping layer. Finally, a Mo thin film formation process with low resistance, even at a thickness of 5 nm, was achieved.

Original language	English
Pages (from-to)	4542-4548
Number of pages	7
Journal	ACS Applied Electronic Materials
Volume	5
Issue number	8
DOIs	https://doi.org/10.1021/acsaelm.3c00711
Publication status	Published - 22 Aug 2023

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society.

Keywords

agglomeration
capping layer
metal thin film
molybdenum
plasma-enhanced atomic layer deposition

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10.1021/acsaelm.3c00711

Cite this

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title = "Molybdenum Thin Film Formation from Molybdenum Nitride Deposited by Plasma-enhanced Atomic Layer Deposition with Hydrogen-permeable Mechanical Capping Layer",

abstract = "In this study, we developed a Mo metal thin film deposition process consisting of two steps: Mo2N thin film deposition using plasma-enhanced atomic layer deposition, followed by rapid thermal annealing. The mechanism underlying the reduction of Mo2N during the post-deposition annealing was investigated. Agglomeration during the reduction of Mo2N to Mo was successfully suppressed by using a hydrogen-permeable mechanical capping layer. Finally, a Mo thin film formation process with low resistance, even at a thickness of 5 nm, was achieved.",

keywords = "agglomeration, capping layer, metal thin film, molybdenum, plasma-enhanced atomic layer deposition",

author = "Park, \{Jeong Hyeon\} and Kim, \{Ye Won\} and Kim, \{Myeong Ho\} and Kim, \{Jin Sik\} and Woojin Jeon",

note = "Publisher Copyright: {\textcopyright} 2023 American Chemical Society.",

year = "2023",

month = aug,

day = "22",

doi = "10.1021/acsaelm.3c00711",

language = "English",

volume = "5",

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T1 - Molybdenum Thin Film Formation from Molybdenum Nitride Deposited by Plasma-enhanced Atomic Layer Deposition with Hydrogen-permeable Mechanical Capping Layer

AU - Park, Jeong Hyeon

AU - Kim, Ye Won

AU - Kim, Myeong Ho

AU - Kim, Jin Sik

AU - Jeon, Woojin

PY - 2023/8/22

Y1 - 2023/8/22

N2 - In this study, we developed a Mo metal thin film deposition process consisting of two steps: Mo2N thin film deposition using plasma-enhanced atomic layer deposition, followed by rapid thermal annealing. The mechanism underlying the reduction of Mo2N during the post-deposition annealing was investigated. Agglomeration during the reduction of Mo2N to Mo was successfully suppressed by using a hydrogen-permeable mechanical capping layer. Finally, a Mo thin film formation process with low resistance, even at a thickness of 5 nm, was achieved.

AB - In this study, we developed a Mo metal thin film deposition process consisting of two steps: Mo2N thin film deposition using plasma-enhanced atomic layer deposition, followed by rapid thermal annealing. The mechanism underlying the reduction of Mo2N during the post-deposition annealing was investigated. Agglomeration during the reduction of Mo2N to Mo was successfully suppressed by using a hydrogen-permeable mechanical capping layer. Finally, a Mo thin film formation process with low resistance, even at a thickness of 5 nm, was achieved.

KW - agglomeration

KW - capping layer

KW - metal thin film

KW - molybdenum

KW - plasma-enhanced atomic layer deposition

UR - https://www.scopus.com/pages/publications/85167915463

U2 - 10.1021/acsaelm.3c00711

DO - 10.1021/acsaelm.3c00711

M3 - Article

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SN - 2637-6113

VL - 5

SP - 4542

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JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 8

ER -

Molybdenum Thin Film Formation from Molybdenum Nitride Deposited by Plasma-enhanced Atomic Layer Deposition with Hydrogen-permeable Mechanical Capping Layer

Abstract

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Reports from Kyung Hee University Add New Data to Findings in Atomic Layer Deposition (Molybdenum Thin Film Formation From Molybdenum Nitride Deposited By Plasma-enhanced Atomic Layer Deposition With Hydrogen-permeable Mechanical Capping Layer)

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Molybdenum Thin Film Formation from Molybdenum Nitride Deposited by Plasma-enhanced Atomic Layer Deposition with Hydrogen-permeable Mechanical Capping Layer

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Press/Media

Reports from Kyung Hee University Add New Data to Findings in Atomic Layer Deposition (Molybdenum Thin Film Formation From Molybdenum Nitride Deposited By Plasma-enhanced Atomic Layer Deposition With Hydrogen-permeable Mechanical Capping Layer)

Cite this