Monolayer epitaxy of GaAs 650 °C by metal-organic chemical-vapor deposition with surface photoabsorption monitoring

Y. D. Kim; F. Nakamura; E. Yoon; D. V. Forbes; J. J. Coleman

doi:10.1063/1.116988

Monolayer epitaxy of GaAs 650 °C by metal-organic chemical-vapor deposition with surface photoabsorption monitoring

Y. D. Kim
, F. Nakamura
, E. Yoon
, D. V. Forbes
, J. J. Coleman

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report monolayer-by-monolayer epitaxy of GaAs at 650 °C using surface photoabsorption (SPA) to monitor growth. Our results show, as confirmed by photoluminescence measurements, the possibility of growing highly accurate quantum well heterostructures by metal-organic chemical-vapor deposition at conventional growth temperatures. In addition, we observe a continuous increase of the SPA signal during trimethylgallium exposure that cannot be explained by present growth models.

Original language	English
Pages (from-to)	4209-4211
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	27
DOIs	https://doi.org/10.1063/1.116988
Publication status	Published - 30 Dec 1996

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10.1063/1.116988

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title = "Monolayer epitaxy of GaAs 650 °C by metal-organic chemical-vapor deposition with surface photoabsorption monitoring",

abstract = "We report monolayer-by-monolayer epitaxy of GaAs at 650 °C using surface photoabsorption (SPA) to monitor growth. Our results show, as confirmed by photoluminescence measurements, the possibility of growing highly accurate quantum well heterostructures by metal-organic chemical-vapor deposition at conventional growth temperatures. In addition, we observe a continuous increase of the SPA signal during trimethylgallium exposure that cannot be explained by present growth models.",

author = "Kim, \{Y. D.\} and F. Nakamura and E. Yoon and Forbes, \{D. V.\} and Coleman, \{J. J.\}",

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AU - Kim, Y. D.

AU - Nakamura, F.

AU - Yoon, E.

AU - Forbes, D. V.

AU - Coleman, J. J.

PY - 1996/12/30

Y1 - 1996/12/30

N2 - We report monolayer-by-monolayer epitaxy of GaAs at 650 °C using surface photoabsorption (SPA) to monitor growth. Our results show, as confirmed by photoluminescence measurements, the possibility of growing highly accurate quantum well heterostructures by metal-organic chemical-vapor deposition at conventional growth temperatures. In addition, we observe a continuous increase of the SPA signal during trimethylgallium exposure that cannot be explained by present growth models.

AB - We report monolayer-by-monolayer epitaxy of GaAs at 650 °C using surface photoabsorption (SPA) to monitor growth. Our results show, as confirmed by photoluminescence measurements, the possibility of growing highly accurate quantum well heterostructures by metal-organic chemical-vapor deposition at conventional growth temperatures. In addition, we observe a continuous increase of the SPA signal during trimethylgallium exposure that cannot be explained by present growth models.

UR - https://www.scopus.com/pages/publications/0007184243

U2 - 10.1063/1.116988

DO - 10.1063/1.116988

M3 - Article

AN - SCOPUS:0007184243

SN - 0003-6951

VL - 69

SP - 4209

EP - 4211

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 27

ER -

Monolayer epitaxy of GaAs 650 °C by metal-organic chemical-vapor deposition with surface photoabsorption monitoring

Abstract

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