Multilevel resistive-change memory operation of al-doped ZnO thin-film transistor

Won Ho Lee; Eom Ji Kim; Sung Min Yoon

doi:10.1109/LED.2016.2584704

Multilevel resistive-change memory operation of al-doped ZnO thin-film transistor

Won Ho Lee
, Eom Ji Kim
, Sung Min Yoon

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A multilevel resistive-change memory device with thin-film transistor (TFT) structure is proposed, in which both functions of transistor and nonvolatile memory can be performed. Al-doped ZnO was employed for the active channel of the TFT as well as for the resistive-change material of the memory device. Multilevel memory operations could be realized by controlling the number of conducting filaments within the channel. Sound TFT characteristics and nonvolatile memory functions were demonstrated. The programmed current ratios for three-level memory states were 1:3.8:25. As results, long-time stability (10⁴s) and program endurance (100 cycles) for the three-level memory states were also confirmed.

Original language	English
Article number	7499819
Pages (from-to)	1014-1017
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	8
DOIs	https://doi.org/10.1109/LED.2016.2584704
Publication status	Published - Aug 2016

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Al-doped ZnO (AZO)
Resistive change-type random access memory (ReRAM)
conducting filament (CF)
multilevel memory
oxide semiconductor

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10.1109/LED.2016.2584704

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title = "Multilevel resistive-change memory operation of al-doped ZnO thin-film transistor",

abstract = "A multilevel resistive-change memory device with thin-film transistor (TFT) structure is proposed, in which both functions of transistor and nonvolatile memory can be performed. Al-doped ZnO was employed for the active channel of the TFT as well as for the resistive-change material of the memory device. Multilevel memory operations could be realized by controlling the number of conducting filaments within the channel. Sound TFT characteristics and nonvolatile memory functions were demonstrated. The programmed current ratios for three-level memory states were 1:3.8:25. As results, long-time stability (104s) and program endurance (100 cycles) for the three-level memory states were also confirmed.",

keywords = "Al-doped ZnO (AZO), Resistive change-type random access memory (ReRAM), conducting filament (CF), multilevel memory, oxide semiconductor",

author = "Lee, \{Won Ho\} and Kim, \{Eom Ji\} and Yoon, \{Sung Min\}",

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year = "2016",

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doi = "10.1109/LED.2016.2584704",

language = "English",

volume = "37",

pages = "1014--1017",

journal = "IEEE Electron Device Letters",

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T1 - Multilevel resistive-change memory operation of al-doped ZnO thin-film transistor

AU - Lee, Won Ho

AU - Kim, Eom Ji

AU - Yoon, Sung Min

PY - 2016/8

Y1 - 2016/8

N2 - A multilevel resistive-change memory device with thin-film transistor (TFT) structure is proposed, in which both functions of transistor and nonvolatile memory can be performed. Al-doped ZnO was employed for the active channel of the TFT as well as for the resistive-change material of the memory device. Multilevel memory operations could be realized by controlling the number of conducting filaments within the channel. Sound TFT characteristics and nonvolatile memory functions were demonstrated. The programmed current ratios for three-level memory states were 1:3.8:25. As results, long-time stability (104s) and program endurance (100 cycles) for the three-level memory states were also confirmed.

AB - A multilevel resistive-change memory device with thin-film transistor (TFT) structure is proposed, in which both functions of transistor and nonvolatile memory can be performed. Al-doped ZnO was employed for the active channel of the TFT as well as for the resistive-change material of the memory device. Multilevel memory operations could be realized by controlling the number of conducting filaments within the channel. Sound TFT characteristics and nonvolatile memory functions were demonstrated. The programmed current ratios for three-level memory states were 1:3.8:25. As results, long-time stability (104s) and program endurance (100 cycles) for the three-level memory states were also confirmed.

KW - Al-doped ZnO (AZO)

KW - Resistive change-type random access memory (ReRAM)

KW - conducting filament (CF)

KW - multilevel memory

KW - oxide semiconductor

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DO - 10.1109/LED.2016.2584704

M3 - Article

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SN - 0741-3106

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SP - 1014

EP - 1017

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 7499819

ER -

Multilevel resistive-change memory operation of al-doped ZnO thin-film transistor

Abstract

Bibliographical note

Keywords

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