N-channel organic thin-film transistor based on N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide grown by organic vapor deposition

Ki Jung Lee; Seung Hoon Han; Sun Hee Lee; Jin Jang

N-channel organic thin-film transistor based on N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide grown by organic vapor deposition

Ki Jung Lee
, Seung Hoon Han
, Sun Hee Lee
, Jin Jang

Research output: Contribution to conference › Paper › peer-review

Abstract

We have studied the bottom-contact n-type organic thin-film transistors(N-OTFT) based on N,N'-dioctyl -3,4,9,10 -perylene tetracarboxylic diimides (PTCDI-C₈) grown by organic vapor deposition (OVD). The surface energy was controlled to be hydrophobic by octadecyltrichlorosilane treatment and hydrophilic by oxygen plasma. On the TFT channel treated by OTS a large PTCDI-C₈ grain was grown. The N-OTFT with large grains exhibited the field-effect mobility of 0.03 cm²/Vs with an on/off current ratio of 10⁶ in ambient air.

Original language	English
Pages	1833-1836
Number of pages	4
Publication status	Published - 2007
Event	14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 5 Dec 2007 → 5 Dec 2007

Conference

Conference	14th International Display Workshops, IDW '07
Country/Territory	Japan
City	Sapporo
Period	5/12/07 → 5/12/07

Cite this

@conference{12ff6432a12b46888eb16eb48309e7b3,

title = "N-channel organic thin-film transistor based on N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide grown by organic vapor deposition",

abstract = "We have studied the bottom-contact n-type organic thin-film transistors(N-OTFT) based on N,N'-dioctyl -3,4,9,10 -perylene tetracarboxylic diimides (PTCDI-C8) grown by organic vapor deposition (OVD). The surface energy was controlled to be hydrophobic by octadecyltrichlorosilane treatment and hydrophilic by oxygen plasma. On the TFT channel treated by OTS a large PTCDI-C8 grain was grown. The N-OTFT with large grains exhibited the field-effect mobility of 0.03 cm2/Vs with an on/off current ratio of 106 in ambient air.",

author = "Lee, \{Ki Jung\} and Han, \{Seung Hoon\} and Lee, \{Sun Hee\} and Jin Jang",

year = "2007",

language = "English",

pages = "1833--1836",

}

TY - CONF

T1 - N-channel organic thin-film transistor based on N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide grown by organic vapor deposition

AU - Lee, Ki Jung

AU - Han, Seung Hoon

AU - Lee, Sun Hee

AU - Jang, Jin

PY - 2007

Y1 - 2007

N2 - We have studied the bottom-contact n-type organic thin-film transistors(N-OTFT) based on N,N'-dioctyl -3,4,9,10 -perylene tetracarboxylic diimides (PTCDI-C8) grown by organic vapor deposition (OVD). The surface energy was controlled to be hydrophobic by octadecyltrichlorosilane treatment and hydrophilic by oxygen plasma. On the TFT channel treated by OTS a large PTCDI-C8 grain was grown. The N-OTFT with large grains exhibited the field-effect mobility of 0.03 cm2/Vs with an on/off current ratio of 106 in ambient air.

AB - We have studied the bottom-contact n-type organic thin-film transistors(N-OTFT) based on N,N'-dioctyl -3,4,9,10 -perylene tetracarboxylic diimides (PTCDI-C8) grown by organic vapor deposition (OVD). The surface energy was controlled to be hydrophobic by octadecyltrichlorosilane treatment and hydrophilic by oxygen plasma. On the TFT channel treated by OTS a large PTCDI-C8 grain was grown. The N-OTFT with large grains exhibited the field-effect mobility of 0.03 cm2/Vs with an on/off current ratio of 106 in ambient air.

UR - https://www.scopus.com/pages/publications/43349089481

M3 - Paper

AN - SCOPUS:43349089481

SP - 1833

EP - 1836

T2 - 14th International Display Workshops, IDW '07

Y2 - 5 December 2007 through 5 December 2007

ER -

N-channel organic thin-film transistor based on N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide grown by organic vapor deposition

Abstract

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