Nanoscale resistive switching memory device composed of NiO nanodot and graphene nanoribbon nanogap electrodes

Woo Hee Kim; Chang Soo Park; Jong Yeog Son

doi:10.1016/j.carbon.2014.07.081

Nanoscale resistive switching memory device composed of NiO nanodot and graphene nanoribbon nanogap electrodes

Woo Hee Kim, Chang Soo Park, Jong Yeog Son

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

We report a nanoscale resistive random access memory (RRAM) device consisting of a NiO nanodot and graphene nanoribbon (GNR) nanogap electrodes. The GNR nanogap was established by an electroburning process induced by applying voltage ramp stress between the two ends of the GNR. A NiO nanodot was then deposited between the nanogapped GNR electrodes by an elaborately controllable dip pen lithography method using a nickel carbonate [Ni₂ (CO₃)(OH)₂] solution. The nanoscale GNR/NiO/GNR RRAM device exhibited reliable unipolar resistive switching characteristics with low SET/RESET voltages and currents, which might be the result of its miniaturized size and well-defined Ohmic contacts between the NiO nanodot and GNR electrodes.

Original language	English
Pages (from-to)	388-392
Number of pages	5
Journal	Carbon
Volume	79
Issue number	1
DOIs	https://doi.org/10.1016/j.carbon.2014.07.081
Publication status	Published - 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier Ltd. All rights reserved.

Access to Document

10.1016/j.carbon.2014.07.081

Cite this

@article{e068d9e26ad84872ab53c505fd652ba7,

title = "Nanoscale resistive switching memory device composed of NiO nanodot and graphene nanoribbon nanogap electrodes",

abstract = "We report a nanoscale resistive random access memory (RRAM) device consisting of a NiO nanodot and graphene nanoribbon (GNR) nanogap electrodes. The GNR nanogap was established by an electroburning process induced by applying voltage ramp stress between the two ends of the GNR. A NiO nanodot was then deposited between the nanogapped GNR electrodes by an elaborately controllable dip pen lithography method using a nickel carbonate [Ni2 (CO3)(OH)2] solution. The nanoscale GNR/NiO/GNR RRAM device exhibited reliable unipolar resistive switching characteristics with low SET/RESET voltages and currents, which might be the result of its miniaturized size and well-defined Ohmic contacts between the NiO nanodot and GNR electrodes.",

author = "Kim, {Woo Hee} and Park, {Chang Soo} and Son, {Jong Yeog}",

year = "2014",

doi = "10.1016/j.carbon.2014.07.081",

language = "English",

volume = "79",

pages = "388--392",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Ltd.",

number = "1",

}

TY - JOUR

T1 - Nanoscale resistive switching memory device composed of NiO nanodot and graphene nanoribbon nanogap electrodes

AU - Kim, Woo Hee

AU - Park, Chang Soo

AU - Son, Jong Yeog

PY - 2014

Y1 - 2014

N2 - We report a nanoscale resistive random access memory (RRAM) device consisting of a NiO nanodot and graphene nanoribbon (GNR) nanogap electrodes. The GNR nanogap was established by an electroburning process induced by applying voltage ramp stress between the two ends of the GNR. A NiO nanodot was then deposited between the nanogapped GNR electrodes by an elaborately controllable dip pen lithography method using a nickel carbonate [Ni2 (CO3)(OH)2] solution. The nanoscale GNR/NiO/GNR RRAM device exhibited reliable unipolar resistive switching characteristics with low SET/RESET voltages and currents, which might be the result of its miniaturized size and well-defined Ohmic contacts between the NiO nanodot and GNR electrodes.

AB - We report a nanoscale resistive random access memory (RRAM) device consisting of a NiO nanodot and graphene nanoribbon (GNR) nanogap electrodes. The GNR nanogap was established by an electroburning process induced by applying voltage ramp stress between the two ends of the GNR. A NiO nanodot was then deposited between the nanogapped GNR electrodes by an elaborately controllable dip pen lithography method using a nickel carbonate [Ni2 (CO3)(OH)2] solution. The nanoscale GNR/NiO/GNR RRAM device exhibited reliable unipolar resistive switching characteristics with low SET/RESET voltages and currents, which might be the result of its miniaturized size and well-defined Ohmic contacts between the NiO nanodot and GNR electrodes.

UR - http://www.scopus.com/inward/record.url?scp=84920555128&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2014.07.081

DO - 10.1016/j.carbon.2014.07.081

M3 - Article

AN - SCOPUS:84920555128

SN - 0008-6223

VL - 79

SP - 388

EP - 392

JO - Carbon

JF - Carbon

IS - 1

ER -

Nanoscale resistive switching memory device composed of NiO nanodot and graphene nanoribbon nanogap electrodes

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this