@inproceedings{1132e994682448e2aefccca55803bc79,
title = "Negative bias enhanced photo instability of top gate IGZO TFT",
abstract = "We have investigated the effect of active layer thickness in top gate IGZO TFT on the negative bias enhanced photo instability. While the negative bias stability of top gate IGZO TFT was not affected by the active layer thickness in the dark, negative Vth shift is increased with the increase of the active layer thickness under visible white light illumination during negative bias stress. We attributed this much increased negative Vth shift to the increase of donor species as well as the increased positive charge trapping in the gate insulator.",
keywords = "IGZO TFT, NBIS, Oxide TFT, Photo stability",
author = "Park, \{Sang Hee Ko\} and Minki Ryu and Kyounghwan Kim and Shinhyuk Yang and Hwang, \{Chi Sun\} and Chunwon Byun and Yoon, \{Sung Min\} and Himchan Oh",
note = "Copyright: Copyright 2011 Elsevier B.V., All rights reserved.; 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 ; Conference date: 11-10-2010 Through 15-10-2010",
year = "2010",
language = "English",
isbn = "9781617827020",
series = "Proceedings of International Meeting on Information Display",
pages = "169--170",
booktitle = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010",
}