New amorphous silicon majority-carrier device

Jin Jang, Choochon Lee

Research output: Contribution to journalArticlepeer-review


A new majority-carrier rectifying device is demonstrated which is made in hydrogenated amorphous silicon deposited by glow discharge decomposition. The devices were made in a structure composed of phosphorus doped, boron doped, intrinsic, and phosphorus-doped layers in series, prepared by using doping gas in the discharge. The rectification ratio at 1 V is over 106. Barrier heights depend on the thickness of boron-doped layer, and barriers as high as 1.09 eV are obtained with boron-doped layer of 120 Å. Conversion efficiencies of up to 5.7% under 20-mW/cm2 illumination have been observed.

Original languageEnglish
Pages (from-to)90-92
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 1983


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