New amorphous silicon majority-carrier device

Jin Jang; Choochon Lee

doi:10.1063/1.94133

New amorphous silicon majority-carrier device

Jin Jang, Choochon Lee

Research output: Contribution to journal › Article › peer-review

Abstract

A new majority-carrier rectifying device is demonstrated which is made in hydrogenated amorphous silicon deposited by glow discharge decomposition. The devices were made in a structure composed of phosphorus doped, boron doped, intrinsic, and phosphorus-doped layers in series, prepared by using doping gas in the discharge. The rectification ratio at 1 V is over 10⁶. Barrier heights depend on the thickness of boron-doped layer, and barriers as high as 1.09 eV are obtained with boron-doped layer of 120 Å. Conversion efficiencies of up to 5.7% under 20-mW/cm² illumination have been observed.

Original language	English
Pages (from-to)	90-92
Number of pages	3
Journal	Applied Physics Letters
Volume	43
Issue number	1
DOIs	https://doi.org/10.1063/1.94133
Publication status	Published - 1983

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title = "New amorphous silicon majority-carrier device",

abstract = "A new majority-carrier rectifying device is demonstrated which is made in hydrogenated amorphous silicon deposited by glow discharge decomposition. The devices were made in a structure composed of phosphorus doped, boron doped, intrinsic, and phosphorus-doped layers in series, prepared by using doping gas in the discharge. The rectification ratio at 1 V is over 106. Barrier heights depend on the thickness of boron-doped layer, and barriers as high as 1.09 eV are obtained with boron-doped layer of 120 {\AA}. Conversion efficiencies of up to 5.7% under 20-mW/cm2 illumination have been observed.",

author = "Jin Jang and Choochon Lee",

year = "1983",

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journal = "Applied Physics Letters",

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AB - A new majority-carrier rectifying device is demonstrated which is made in hydrogenated amorphous silicon deposited by glow discharge decomposition. The devices were made in a structure composed of phosphorus doped, boron doped, intrinsic, and phosphorus-doped layers in series, prepared by using doping gas in the discharge. The rectification ratio at 1 V is over 106. Barrier heights depend on the thickness of boron-doped layer, and barriers as high as 1.09 eV are obtained with boron-doped layer of 120 Å. Conversion efficiencies of up to 5.7% under 20-mW/cm2 illumination have been observed.

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New amorphous silicon majority-carrier device

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