New type Schottky diodes based on the heterostructure of transition metal oxides: p-La2/3Sr1/3VO3/n-TiO2

Dae Ho Jung; Ye Jin Oh; Woo Sung Park; Hosun Lee

doi:10.1016/j.cap.2020.07.007

New type Schottky diodes based on the heterostructure of transition metal oxides: p-La_2/3Sr_1/3VO₃/n-TiO₂

Dae Ho Jung
, Ye Jin Oh
, Woo Sung Park
, Hosun Lee

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We make a new type of bipolar Schottky diodes using the p-type La_2/3Sr_1/3VO₃ (LSVO)/n-TiO₂ heterostructure. The p-type LSVO metal thin films are grown on various substrates using radio frequency magnetron co-sputtering deposition. We find that the LSVO film grown on anatase TiO₂ layer produce the lowest resistivity of 0.28 mΩ cm. We discover that the resistivity decreases with decreasing LSVO film thickness for LSVO/TiO₂/Si structures. Hall measurements are performed and the dielectric functions of LSVO films are measured. The effective mass of LSVO/TiO₂/Si is determined to be 2.54 ± 0.05 m₀. The current-voltage curves of the Schottky diodes of p-LSVO/n-TiO₂ is measured and is explained using band alignment diagram. We identify a new type of Schottky diode, where both electrons in n-TiO₂ and holes in p-LSVO can flow under bias.

Original language	English
Pages (from-to)	1453-1459
Number of pages	7
Journal	Current Applied Physics
Volume	20
Issue number	12
DOIs	https://doi.org/10.1016/j.cap.2020.07.007
Publication status	Published - Dec 2020

Bibliographical note

Publisher Copyright:
© 2020 Korean Physical Society

Keywords

Effective mass
Ellipsometry
Hall effect measurement
Schottky diode
Strong correlation
p-type LaSrVO film

Access to Document

10.1016/j.cap.2020.07.007

Cite this

@article{43ab2846a034447ea904780b43e16a65,

title = "New type Schottky diodes based on the heterostructure of transition metal oxides: p-La2/3Sr1/3VO3/n-TiO2",

abstract = "We make a new type of bipolar Schottky diodes using the p-type La2/3Sr1/3VO3 (LSVO)/n-TiO2 heterostructure. The p-type LSVO metal thin films are grown on various substrates using radio frequency magnetron co-sputtering deposition. We find that the LSVO film grown on anatase TiO2 layer produce the lowest resistivity of 0.28 mΩ cm. We discover that the resistivity decreases with decreasing LSVO film thickness for LSVO/TiO2/Si structures. Hall measurements are performed and the dielectric functions of LSVO films are measured. The effective mass of LSVO/TiO2/Si is determined to be 2.54 ± 0.05 m0. The current-voltage curves of the Schottky diodes of p-LSVO/n-TiO2 is measured and is explained using band alignment diagram. We identify a new type of Schottky diode, where both electrons in n-TiO2 and holes in p-LSVO can flow under bias.",

keywords = "Effective mass, Ellipsometry, Hall effect measurement, Schottky diode, Strong correlation, p-type LaSrVO film",

author = "Jung, \{Dae Ho\} and Oh, \{Ye Jin\} and Park, \{Woo Sung\} and Hosun Lee",

note = "Publisher Copyright: {\textcopyright} 2020 Korean Physical Society",

year = "2020",

month = dec,

doi = "10.1016/j.cap.2020.07.007",

language = "English",

volume = "20",

pages = "1453--1459",

journal = "Current Applied Physics",

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T1 - New type Schottky diodes based on the heterostructure of transition metal oxides

T2 - p-La2/3Sr1/3VO3/n-TiO2

AU - Jung, Dae Ho

AU - Oh, Ye Jin

AU - Park, Woo Sung

AU - Lee, Hosun

PY - 2020/12

Y1 - 2020/12

N2 - We make a new type of bipolar Schottky diodes using the p-type La2/3Sr1/3VO3 (LSVO)/n-TiO2 heterostructure. The p-type LSVO metal thin films are grown on various substrates using radio frequency magnetron co-sputtering deposition. We find that the LSVO film grown on anatase TiO2 layer produce the lowest resistivity of 0.28 mΩ cm. We discover that the resistivity decreases with decreasing LSVO film thickness for LSVO/TiO2/Si structures. Hall measurements are performed and the dielectric functions of LSVO films are measured. The effective mass of LSVO/TiO2/Si is determined to be 2.54 ± 0.05 m0. The current-voltage curves of the Schottky diodes of p-LSVO/n-TiO2 is measured and is explained using band alignment diagram. We identify a new type of Schottky diode, where both electrons in n-TiO2 and holes in p-LSVO can flow under bias.

AB - We make a new type of bipolar Schottky diodes using the p-type La2/3Sr1/3VO3 (LSVO)/n-TiO2 heterostructure. The p-type LSVO metal thin films are grown on various substrates using radio frequency magnetron co-sputtering deposition. We find that the LSVO film grown on anatase TiO2 layer produce the lowest resistivity of 0.28 mΩ cm. We discover that the resistivity decreases with decreasing LSVO film thickness for LSVO/TiO2/Si structures. Hall measurements are performed and the dielectric functions of LSVO films are measured. The effective mass of LSVO/TiO2/Si is determined to be 2.54 ± 0.05 m0. The current-voltage curves of the Schottky diodes of p-LSVO/n-TiO2 is measured and is explained using band alignment diagram. We identify a new type of Schottky diode, where both electrons in n-TiO2 and holes in p-LSVO can flow under bias.

KW - Effective mass

KW - Ellipsometry

KW - Hall effect measurement

KW - Schottky diode

KW - Strong correlation

KW - p-type LaSrVO film

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DO - 10.1016/j.cap.2020.07.007

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