Nonvolatile memories using deep traps formed in Al2 O 3 by metal ion implantation

Min Choul Kim; Seung Hui Hong; Hye Ryong Kim; Sung Kim; Suk Ho Choi; R. G. Elliman; S. P. Russo

doi:10.1063/1.3097799

Nonvolatile memories using deep traps formed in Al₂ O ₃ by metal ion implantation

Min Choul Kim, Seung Hui Hong, Hye Ryong Kim, Sung Kim, Suk Ho Choi, R. G. Elliman, S. P. Russo

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11 Citations (Scopus)

Abstract

We demonstrate the feasibility of an approach to nonvolatile memory (NVM) that exploits charge trapping at deep-energy levels formed in Al₂ O₃ by metal doping. Our calculations show that V and Nb are expected to form such deep energy levels in the band gap of Al₂ O₃. To demonstrate the effectiveness of this approach these metal ions were ion-implanted into test structures based on an Al₂ O₃ trapping layer. Several structural analysis techniques and photocurrent spectroscopy show that the doped metal ions are located close to the Al ₂ O₃ / SiO₂ interface and exhibit characteristics consistent with some of the deep levels predicted in calculations. The resulting test devices are shown to exhibit promising NVM characteristics.

Original language	English
Article number	112110
Journal	Applied Physics Letters
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.3097799
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R01-2007-000-20142-0). M.C.K. acknowledges a support from the Kyung Hee University Graduate School Scholarship for Outstanding Research Papers in the second semester, 2007.

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abstract = "We demonstrate the feasibility of an approach to nonvolatile memory (NVM) that exploits charge trapping at deep-energy levels formed in Al2 O3 by metal doping. Our calculations show that V and Nb are expected to form such deep energy levels in the band gap of Al2 O3. To demonstrate the effectiveness of this approach these metal ions were ion-implanted into test structures based on an Al2 O3 trapping layer. Several structural analysis techniques and photocurrent spectroscopy show that the doped metal ions are located close to the Al 2 O3 / SiO2 interface and exhibit characteristics consistent with some of the deep levels predicted in calculations. The resulting test devices are shown to exhibit promising NVM characteristics.",

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AU - Choi, Suk Ho

AU - Elliman, R. G.

AU - Russo, S. P.

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AB - We demonstrate the feasibility of an approach to nonvolatile memory (NVM) that exploits charge trapping at deep-energy levels formed in Al2 O3 by metal doping. Our calculations show that V and Nb are expected to form such deep energy levels in the band gap of Al2 O3. To demonstrate the effectiveness of this approach these metal ions were ion-implanted into test structures based on an Al2 O3 trapping layer. Several structural analysis techniques and photocurrent spectroscopy show that the doped metal ions are located close to the Al 2 O3 / SiO2 interface and exhibit characteristics consistent with some of the deep levels predicted in calculations. The resulting test devices are shown to exhibit promising NVM characteristics.

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Nonvolatile memories using deep traps formed in Al₂ O ₃ by metal ion implantation

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