Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3

Min Choul Kim; Sung Kim; Suk Ho Choi; Kidane Belay; Rob G. Elliman; Salvy P. Russo

doi:10.1109/LED.2009.2024440

Nonvolatile-Memory Characteristics of AlO^--Implanted AI₂O₃

Min Choul Kim, Sung Kim, Suk Ho Choi, Kidane Belay, Rob G. Elliman, Salvy P. Russo

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The nonvolatile-memory (NVM) characteristics of AIO^- -implanted Al₂O₃structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al₂O₃, and our calculations show that these levels are likely attributed to the defects in the Al₂O₃, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.

Original language	English
Pages (from-to)	837-839
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	8
DOIs	https://doi.org/10.1109/LED.2009.2024440
Publication status	Published - 2009

Bibliographical note

Funding Information:
Manuscript received April 30, 2009; revised May 20, 2009. First published July 7, 2009; current version published July 27, 2009. This work was supported by the National Research Program for the 0.1-Terabit Nonvolatile-Memory Development sponsored by the Korean Ministry of Science and Technology. The review of this letter was arranged by Editor T. Wang.

Keywords

AlO
AlO ion implantation
Deep trap
Nonvolatile-memory (NVM)

Access to Document

10.1109/LED.2009.2024440

Cite this

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title = "Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3",

abstract = "The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.",

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note = "Funding Information: Manuscript received April 30, 2009; revised May 20, 2009. First published July 7, 2009; current version published July 27, 2009. This work was supported by the National Research Program for the 0.1-Terabit Nonvolatile-Memory Development sponsored by the Korean Ministry of Science and Technology. The review of this letter was arranged by Editor T. Wang.",

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AU - Elliman, Rob G.

AU - Russo, Salvy P.

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AB - The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.

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