Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte

We report that industrially qualified SbTe chalcogenide film can be applied to programmable metallization cell memory switching device. To fabricate the switching device, Sb35 Te65, Ag, and W (top electrode) were consequently sputtered on TiW (bottom electrode)/ Si O2 Si substrate, and Ag diffusion process was not added. During Ag sputtering, it is apparent that Ag is diffused into Sb35 Te65 film to form Ag-doped Sb35 Te65 solid electrolyte, and that some of the diffused Ag reacts with Te to form Ag-Te bond in the solid electrolyte.