Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy

Unil A. Perera; Haoxin Yuan; J. W. Choe; M. H. Francombe

doi:10.1117/12.211244

Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy

Unil A. Perera
, Haoxin Yuan
, J. W. Choe
, M. H. Francombe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

A novel homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detector based on the interfacial workfunction (IWF) between a heavily doped absorber/emitter layer and a lightly doped (or intrinsic) layer is reported. The detector structures are classified according to their emitter layer doping concentrations (N_d). The threshold wavelength (λ_t) is tunable in the IR wavelength range by changing N_d and bias voltage. This detector concept has been successfully demonstrated using forward biased commercial Si and Ge p-i-n diodes at 4.2 K. Threshold wavelengths (λ_t) from around 40 - 220 μm for Si and up to 240 μm for Ge were experimentally obtained. A theoretical investigation including an estimation of workfunction dependence on N_d, quantum efficiency calculations, and dark current analysis is reported. Based on these results, the detector noise equivalent power (NEP) limited by thermal noise and background noise is calculated.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	76-87
Number of pages	12
ISBN (Print)	0819418285, 9780819418289
DOIs	https://doi.org/10.1117/12.211244
Publication status	Published - 1995
Event	Infrared Detectors and Instrumentation for Astronomy - Orlando, FL, USA Duration: 18 Apr 1995 → 21 Apr 1995

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2475
ISSN (Print)	0277-786X

Conference

Conference	Infrared Detectors and Instrumentation for Astronomy
City	Orlando, FL, USA
Period	18/04/95 → 21/04/95

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10.1117/12.211244

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Perera, U. A., Yuan, H., Choe, J. W., & Francombe, M. H. (1995). Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 76-87). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2475). Society of Photo-Optical Instrumentation Engineers. https://doi.org/10.1117/12.211244

Perera, Unil A. ; Yuan, Haoxin ; Choe, J. W. et al. / Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy. Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers, 1995. pp. 76-87 (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy",

abstract = "A novel homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detector based on the interfacial workfunction (IWF) between a heavily doped absorber/emitter layer and a lightly doped (or intrinsic) layer is reported. The detector structures are classified according to their emitter layer doping concentrations (Nd). The threshold wavelength (λt) is tunable in the IR wavelength range by changing N d and bias voltage. This detector concept has been successfully demonstrated using forward biased commercial Si and Ge p-i-n diodes at 4.2 K. Threshold wavelengths (λt) from around 40 - 220 μm for Si and up to 240 μm for Ge were experimentally obtained. A theoretical investigation including an estimation of workfunction dependence on Nd, quantum efficiency calculations, and dark current analysis is reported. Based on these results, the detector noise equivalent power (NEP) limited by thermal noise and background noise is calculated.",

author = "Perera, \{Unil A.\} and Haoxin Yuan and Choe, \{J. W.\} and Francombe, \{M. H.\}",

year = "1995",

doi = "10.1117/12.211244",

language = "English",

isbn = "0819418285",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

pages = "76--87",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

Perera, UA, Yuan, H, Choe, JW & Francombe, MH 1995, Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2475, Society of Photo-Optical Instrumentation Engineers, pp. 76-87, Infrared Detectors and Instrumentation for Astronomy, Orlando, FL, USA, 18/04/95. https://doi.org/10.1117/12.211244

Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy. / Perera, Unil A.; Yuan, Haoxin; Choe, J. W. et al.
Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers, 1995. p. 76-87 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2475).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Perera, Unil A.

AU - Yuan, Haoxin

AU - Choe, J. W.

AU - Francombe, M. H.

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N2 - A novel homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detector based on the interfacial workfunction (IWF) between a heavily doped absorber/emitter layer and a lightly doped (or intrinsic) layer is reported. The detector structures are classified according to their emitter layer doping concentrations (Nd). The threshold wavelength (λt) is tunable in the IR wavelength range by changing N d and bias voltage. This detector concept has been successfully demonstrated using forward biased commercial Si and Ge p-i-n diodes at 4.2 K. Threshold wavelengths (λt) from around 40 - 220 μm for Si and up to 240 μm for Ge were experimentally obtained. A theoretical investigation including an estimation of workfunction dependence on Nd, quantum efficiency calculations, and dark current analysis is reported. Based on these results, the detector noise equivalent power (NEP) limited by thermal noise and background noise is calculated.

AB - A novel homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detector based on the interfacial workfunction (IWF) between a heavily doped absorber/emitter layer and a lightly doped (or intrinsic) layer is reported. The detector structures are classified according to their emitter layer doping concentrations (Nd). The threshold wavelength (λt) is tunable in the IR wavelength range by changing N d and bias voltage. This detector concept has been successfully demonstrated using forward biased commercial Si and Ge p-i-n diodes at 4.2 K. Threshold wavelengths (λt) from around 40 - 220 μm for Si and up to 240 μm for Ge were experimentally obtained. A theoretical investigation including an estimation of workfunction dependence on Nd, quantum efficiency calculations, and dark current analysis is reported. Based on these results, the detector noise equivalent power (NEP) limited by thermal noise and background noise is calculated.

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

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Perera UA, Yuan H, Choe JW, Francombe MH. Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy. In Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers. 1995. p. 76-87. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.211244

Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy

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