Optical properties of InGaAs alloy films in the E2 region by spectroscopic ellipsometry

Y. S. Ihn; T. H. Ghong; Y. D. Kim; S. J. Kim; D. E. Aspnes; T. Yao; B. H. Koo

Optical properties of InGaAs alloy films in the E₂ region by spectroscopic ellipsometry

Y. S. Ihn, T. H. Ghong, Y. D. Kim, S. J. Kim, D. E. Aspnes, T. Yao, B. H. Koo

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

We report pseudodielectric functions 〈 ε 〉 of In_xGa_1-xAs alloy films for several In composition x from 0.00 to 0.66. Films were grown on (110) InP substrates by solid-source molecular beam epitaxy. We used chemical etching to remove overlayers and thereby to obtain the best approximation to the bulk dielectric responses ε of the films. The dependences of the E₀′, E₀′ + Δ₀′, and E₂ critical point point energies on x were obtained by analysis of second energy derivatives of the 〈 ε 〉 spectra.

Original language	English
Pages (from-to)	S242-S245
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

Band gap
Ellipsometry
InGaAs alloy

Cite this

@article{b8e885ea3dcb44b797814283759b322e,

title = "Optical properties of InGaAs alloy films in the E2 region by spectroscopic ellipsometry",

abstract = "We report pseudodielectric functions 〈 ε 〉 of InxGa1-xAs alloy films for several In composition x from 0.00 to 0.66. Films were grown on (110) InP substrates by solid-source molecular beam epitaxy. We used chemical etching to remove overlayers and thereby to obtain the best approximation to the bulk dielectric responses ε of the films. The dependences of the E0′, E0′ + Δ0′, and E2 critical point point energies on x were obtained by analysis of second energy derivatives of the 〈 ε 〉 spectra.",

keywords = "Band gap, Ellipsometry, InGaAs alloy",

author = "Ihn, {Y. S.} and Ghong, {T. H.} and Kim, {Y. D.} and Kim, {S. J.} and Aspnes, {D. E.} and T. Yao and Koo, {B. H.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S242--S245",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

}

TY - JOUR

T1 - Optical properties of InGaAs alloy films in the E2 region by spectroscopic ellipsometry

AU - Ihn, Y. S.

AU - Ghong, T. H.

AU - Kim, Y. D.

AU - Kim, S. J.

AU - Aspnes, D. E.

AU - Yao, T.

AU - Koo, B. H.

PY - 2003/2

Y1 - 2003/2

N2 - We report pseudodielectric functions 〈 ε 〉 of InxGa1-xAs alloy films for several In composition x from 0.00 to 0.66. Films were grown on (110) InP substrates by solid-source molecular beam epitaxy. We used chemical etching to remove overlayers and thereby to obtain the best approximation to the bulk dielectric responses ε of the films. The dependences of the E0′, E0′ + Δ0′, and E2 critical point point energies on x were obtained by analysis of second energy derivatives of the 〈 ε 〉 spectra.

AB - We report pseudodielectric functions 〈 ε 〉 of InxGa1-xAs alloy films for several In composition x from 0.00 to 0.66. Films were grown on (110) InP substrates by solid-source molecular beam epitaxy. We used chemical etching to remove overlayers and thereby to obtain the best approximation to the bulk dielectric responses ε of the films. The dependences of the E0′, E0′ + Δ0′, and E2 critical point point energies on x were obtained by analysis of second energy derivatives of the 〈 ε 〉 spectra.

KW - Band gap

KW - Ellipsometry

KW - InGaAs alloy

UR - http://www.scopus.com/inward/record.url?scp=0037306670&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037306670

SN - 0374-4884

VL - 42

SP - S242-S245

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Optical properties of InGaAs alloy films in the E₂ region by spectroscopic ellipsometry

Abstract

Keywords

Other files and links

Fingerprint

Cite this