Abstract
We investigated the optical properties of ultrathin MoS2 films (number of layers: N-=-1, 2, 4, and 12) using Raman spectroscopy, photoluminescence (PL) spectroscopy, and spectroscopic ellipsometry. We estimated the layer thicknesses based on Raman spectra. We characterized the microstructural properties of a single-layer MoS2 film using atomic force microscopy. We measured the lowest-energy A and B excitons using PL spectroscopy. We measured the ellipsometric angles (Ψ and Δ) of MoS2 thin films using spectroscopic ellipsometry, and obtained the dielectric functions as the films' thickness changed from a single layer to multi-layers. We determined the films' optical gap energies from the absorption coefficients. Applying the standard critical point model to the second derivative of the dielectric function (d2ε(E)/dE2), we determined several critical point energies. The d2ε(E)/dE2 spectra showed doublet peaks around 3-eV corresponding to the C and D transitions, as well as doublet peaks around 2-eV corresponding to the A and B transitions. These doublet structures at 3-eV are attributed to the transitions in the Brillouin zone between the Γ and K points.
Original language | English |
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Article number | 183509 |
Journal | Journal of Applied Physics |
Volume | 116 |
Issue number | 18 |
DOIs | |
Publication status | Published - 14 Nov 2014 |
Bibliographical note
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