Organic transistors using polymeric gate dielectrics

Jung Hun Lee; Seong Hyun Kim; Gi Heon Kim; Jeong Ik Lee; Yong Suk Yang; Hye Yong Chu; Jiyoung Oh; Lee Mi Do; Taehyoung Zyung; Jin Jang

Organic transistors using polymeric gate dielectrics

Jung Hun Lee, Seong Hyun Kim, Gi Heon Kim, Jeong Ik Lee, Yong Suk Yang, Hye Yong Chu, Jiyoung Oh, Lee Mi Do, Taehyoung Zyung, Jin Jang

Research output: Contribution to journal › Conference article › peer-review

20 Citations (Scopus)

Abstract

In this study, to fabricate organic thin film transistors (OTFT), polyvinyl alcohol (PVA) formed gate dielectrics by using a spin coating process. From the electrical measurements, the current-voltage (I-V) characteristics of the device with PVA gate dielectrics were similar to these obtained by using SiO₂. The field effect mobility μ was calculated to be 0.028 cm²V^-1s^-1 on glass substrate and 0.035 cm²V^-1s^-1 on polyethylene terephthalate (PET) substrate and the threshold voltage VT was about -10 V. When this is compared with the property of the OTFTs fabricated on thermally oxidized silicon substrate, mobility is 0.047 cm²V^-1s^-1, which is similar. The effects of spin coating speed, vacuum curing time, exposure time, and mixture ratio of PVA and ammonium dichromate on devices were investigated.

Original language	English
Pages (from-to)	S614-S617
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

Dielectrics
OTFT
Organic
Transistor

Cite this

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title = "Organic transistors using polymeric gate dielectrics",

abstract = "In this study, to fabricate organic thin film transistors (OTFT), polyvinyl alcohol (PVA) formed gate dielectrics by using a spin coating process. From the electrical measurements, the current-voltage (I-V) characteristics of the device with PVA gate dielectrics were similar to these obtained by using SiO2. The field effect mobility μ was calculated to be 0.028 cm2V-1s-1 on glass substrate and 0.035 cm2V-1s-1 on polyethylene terephthalate (PET) substrate and the threshold voltage VT was about -10 V. When this is compared with the property of the OTFTs fabricated on thermally oxidized silicon substrate, mobility is 0.047 cm2V-1s-1, which is similar. The effects of spin coating speed, vacuum curing time, exposure time, and mixture ratio of PVA and ammonium dichromate on devices were investigated.",

keywords = "Dielectrics, OTFT, Organic, Transistor",

author = "Lee, {Jung Hun} and Kim, {Seong Hyun} and Kim, {Gi Heon} and Lee, {Jeong Ik} and Yang, {Yong Suk} and Chu, {Hye Yong} and Jiyoung Oh and Do, {Lee Mi} and Taehyoung Zyung and Jin Jang",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S614--S617",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Organic transistors using polymeric gate dielectrics

AU - Lee, Jung Hun

AU - Kim, Seong Hyun

AU - Kim, Gi Heon

AU - Lee, Jeong Ik

AU - Yang, Yong Suk

AU - Chu, Hye Yong

AU - Oh, Jiyoung

AU - Do, Lee Mi

AU - Zyung, Taehyoung

AU - Jang, Jin

PY - 2003/2

Y1 - 2003/2

N2 - In this study, to fabricate organic thin film transistors (OTFT), polyvinyl alcohol (PVA) formed gate dielectrics by using a spin coating process. From the electrical measurements, the current-voltage (I-V) characteristics of the device with PVA gate dielectrics were similar to these obtained by using SiO2. The field effect mobility μ was calculated to be 0.028 cm2V-1s-1 on glass substrate and 0.035 cm2V-1s-1 on polyethylene terephthalate (PET) substrate and the threshold voltage VT was about -10 V. When this is compared with the property of the OTFTs fabricated on thermally oxidized silicon substrate, mobility is 0.047 cm2V-1s-1, which is similar. The effects of spin coating speed, vacuum curing time, exposure time, and mixture ratio of PVA and ammonium dichromate on devices were investigated.

AB - In this study, to fabricate organic thin film transistors (OTFT), polyvinyl alcohol (PVA) formed gate dielectrics by using a spin coating process. From the electrical measurements, the current-voltage (I-V) characteristics of the device with PVA gate dielectrics were similar to these obtained by using SiO2. The field effect mobility μ was calculated to be 0.028 cm2V-1s-1 on glass substrate and 0.035 cm2V-1s-1 on polyethylene terephthalate (PET) substrate and the threshold voltage VT was about -10 V. When this is compared with the property of the OTFTs fabricated on thermally oxidized silicon substrate, mobility is 0.047 cm2V-1s-1, which is similar. The effects of spin coating speed, vacuum curing time, exposure time, and mixture ratio of PVA and ammonium dichromate on devices were investigated.

KW - Dielectrics

KW - OTFT

KW - Organic

KW - Transistor

UR - http://www.scopus.com/inward/record.url?scp=0037305231&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037305231

SN - 0374-4884

VL - 42

SP - S614-S617

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Organic transistors using polymeric gate dielectrics

Abstract

Keywords

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