Organic/inorganic hybrid-type nonvolatile memory thin-film transistor on plastic substrate below 150°C

Sung Min Yoon; Shinhyuk Yang; Soon Won Jung; Sang Hee Ko Park; Chun Won Byun; Min Ki Ryu; Himchan Oh; Kyounghwan Kim; Chi Sun Hwang; Kyoung Ik Cho; Byoung Gon Yu

doi:10.1557/opl.2011.1147

Organic/inorganic hybrid-type nonvolatile memory thin-film transistor on plastic substrate below 150°C

Sung Min Yoon
, Shinhyuk Yang
, Soon Won Jung
, Sang Hee Ko Park
, Chun Won Byun
, Min Ki Ryu
, Himchan Oh
, Kyounghwan Kim
, Chi Sun Hwang
, Kyoung Ik Cho
, Byoung Gon Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

An organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/ Al ₂O ₃/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.

Original language	English
Title of host publication	Low-Temperature-Processed Thin-Film Transistors
Pages	31-35
Number of pages	5
DOIs	https://doi.org/10.1557/opl.2011.1147
Publication status	Published - 2011
Event	2010 MRS Fall Meeting - Boston, MA, United States Duration: 29 Nov 2010 → 3 Dec 2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1287
ISSN (Print)	0272-9172

Conference

Conference	2010 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	29/11/10 → 3/12/10

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development program [Project number 10035225, Development of Core Technology for High Performance AMOLED on Plastic] funded by MKE/KEIT.

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10.1557/opl.2011.1147

Cite this

Yoon, S. M., Yang, S., Jung, S. W., Park, S. H. K., Byun, C. W., Ryu, M. K., Oh, H., Kim, K., Hwang, C. S., Cho, K. I., & Yu, B. G. (2011). Organic/inorganic hybrid-type nonvolatile memory thin-film transistor on plastic substrate below 150°C. In Low-Temperature-Processed Thin-Film Transistors (pp. 31-35). (Materials Research Society Symposium Proceedings; Vol. 1287). https://doi.org/10.1557/opl.2011.1147

@inproceedings{f1865eb28b1d4b8ca439ed59f6fe2a4c,

title = "Organic/inorganic hybrid-type nonvolatile memory thin-film transistor on plastic substrate below 150°C",

abstract = "An organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/ Al 2O 3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.",

author = "Yoon, \{Sung Min\} and Shinhyuk Yang and Jung, \{Soon Won\} and Park, \{Sang Hee Ko\} and Byun, \{Chun Won\} and Ryu, \{Min Ki\} and Himchan Oh and Kyounghwan Kim and Hwang, \{Chi Sun\} and Cho, \{Kyoung Ik\} and Yu, \{Byoung Gon\}",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development program [Project number 10035225, Development of Core Technology for High Performance AMOLED on Plastic] funded by MKE/KEIT.; 2010 MRS Fall Meeting ; Conference date: 29-11-2010 Through 03-12-2010",

year = "2011",

doi = "10.1557/opl.2011.1147",

language = "English",

isbn = "9781618395023",

series = "Materials Research Society Symposium Proceedings",

pages = "31--35",

booktitle = "Low-Temperature-Processed Thin-Film Transistors",

}

Yoon, SM, Yang, S, Jung, SW, Park, SHK, Byun, CW, Ryu, MK, Oh, H, Kim, K, Hwang, CS, Cho, KI & Yu, BG 2011, Organic/inorganic hybrid-type nonvolatile memory thin-film transistor on plastic substrate below 150°C. in Low-Temperature-Processed Thin-Film Transistors. Materials Research Society Symposium Proceedings, vol. 1287, pp. 31-35, 2010 MRS Fall Meeting, Boston, MA, United States, 29/11/10. https://doi.org/10.1557/opl.2011.1147

Organic/inorganic hybrid-type nonvolatile memory thin-film transistor on plastic substrate below 150°C. / Yoon, Sung Min; Yang, Shinhyuk; Jung, Soon Won et al.
Low-Temperature-Processed Thin-Film Transistors. 2011. p. 31-35 (Materials Research Society Symposium Proceedings; Vol. 1287).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Organic/inorganic hybrid-type nonvolatile memory thin-film transistor on plastic substrate below 150°C

AU - Yoon, Sung Min

AU - Yang, Shinhyuk

AU - Jung, Soon Won

AU - Park, Sang Hee Ko

AU - Byun, Chun Won

AU - Ryu, Min Ki

AU - Oh, Himchan

AU - Kim, Kyounghwan

AU - Hwang, Chi Sun

AU - Cho, Kyoung Ik

AU - Yu, Byoung Gon

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development program [Project number 10035225, Development of Core Technology for High Performance AMOLED on Plastic] funded by MKE/KEIT.

PY - 2011

Y1 - 2011

N2 - An organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/ Al 2O 3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.

AB - An organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/ Al 2O 3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.

UR - https://www.scopus.com/pages/publications/84859077457

U2 - 10.1557/opl.2011.1147

DO - 10.1557/opl.2011.1147

M3 - Conference contribution

AN - SCOPUS:84859077457

SN - 9781618395023

T3 - Materials Research Society Symposium Proceedings

SP - 31

EP - 35

BT - Low-Temperature-Processed Thin-Film Transistors

T2 - 2010 MRS Fall Meeting

Y2 - 29 November 2010 through 3 December 2010

ER -

Organic/inorganic hybrid-type nonvolatile memory thin-film transistor on plastic substrate below 150°C

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