Oxide semiconductor-based organic/inorganic hybrid dual-gate nonvolatile memory thin-film transistor

Sung Min Yoon; Shinhyuk Yang; Min Ki Ryu; Chun Won Byun; Soon Won Jung; Sang Hee Ko Park; Chi Sun Hwang; Kyoung Ik Cho

doi:10.1109/TED.2011.2139212

Oxide semiconductor-based organic/inorganic hybrid dual-gate nonvolatile memory thin-film transistor

Sung Min Yoon
, Shinhyuk Yang
, Min Ki Ryu
, Chun Won Byun
, Soon Won Jung
, Sang Hee Ko Park
, Chi Sun Hwang
, Kyoung Ik Cho

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

An organic/inorganic hybrid dual-gate (DG) nonvolatile memory thin-film transistor (M-TFT) was proposed as a device with high potential for implementing large-area electronics on flexible and/or transparent substrates. The active channel and bottom and top gate insulators (GIs) of the M-TFT were composed of InGaZnO, Al₂O₃, and poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)], respectively. It was confirmed that the fabricated DG M-TFT showed excellent device characteristics, in which the obtained field-effect mobility, subthreshold swing, and on/off ratio were approximately 32.1 cm^-2V^-1s^-1, 0.13 V/dec, and 10⁸, respectively. It was also successfully demonstrated that the DG configuration for the proposed M-TFT could effectively work for improving the device controllability by individually controlling the bias conditions of the top gate and bottom gate (BG). The turn-on voltage could be dynamically modulated and controlled when an appropriate fixed negative voltage was applied to the BG. The required duration of the programming pulse to obtain a memory margin of more than 10 could be reduced to 100 μs. These results correspond to the first demonstration of a hybrid-type DG M-TFT using a ferroelectric copolymer GI/oxide semiconducting active channel structure and demonstrate the feasibility of a promising memory device embeddable in a large-area electronic system.

Original language	English
Article number	5759768
Pages (from-to)	2135-2142
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	7
DOIs	https://doi.org/10.1109/TED.2011.2139212
Publication status	Published - Jul 2011

Bibliographical note

Funding Information:
Manuscript received October 18, 2010; revised December 23, 2010, February 20, 2011, March 20, 2011, and March 27, 2011; accepted March 29, 2011. Date of publication May 2, 2011; date of current version June 22, 2011. This work was supported by the Industrial Strategic Technology Development program under Project 10035225 (Development of Core Technology for High Performance AMOLED on Plastic) funded by the Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (KEIT). The review of this paper was arranged by Editor J. Kanicki.

Keywords

Dual gate (DG)
InGaZnO (IGZO)
ferroelectric P(VDF-TrFE)
nonvolatile memory
oxide semiconductor
thin-film transistor (TFT)

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10.1109/TED.2011.2139212

Cite this

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title = "Oxide semiconductor-based organic/inorganic hybrid dual-gate nonvolatile memory thin-film transistor",

abstract = "An organic/inorganic hybrid dual-gate (DG) nonvolatile memory thin-film transistor (M-TFT) was proposed as a device with high potential for implementing large-area electronics on flexible and/or transparent substrates. The active channel and bottom and top gate insulators (GIs) of the M-TFT were composed of InGaZnO, Al2O3, and poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)], respectively. It was confirmed that the fabricated DG M-TFT showed excellent device characteristics, in which the obtained field-effect mobility, subthreshold swing, and on/off ratio were approximately 32.1 cm-2V-1s-1, 0.13 V/dec, and 108, respectively. It was also successfully demonstrated that the DG configuration for the proposed M-TFT could effectively work for improving the device controllability by individually controlling the bias conditions of the top gate and bottom gate (BG). The turn-on voltage could be dynamically modulated and controlled when an appropriate fixed negative voltage was applied to the BG. The required duration of the programming pulse to obtain a memory margin of more than 10 could be reduced to 100 μs. These results correspond to the first demonstration of a hybrid-type DG M-TFT using a ferroelectric copolymer GI/oxide semiconducting active channel structure and demonstrate the feasibility of a promising memory device embeddable in a large-area electronic system.",

keywords = "Dual gate (DG), InGaZnO (IGZO), ferroelectric P(VDF-TrFE), nonvolatile memory, oxide semiconductor, thin-film transistor (TFT)",

author = "Yoon, \{Sung Min\} and Shinhyuk Yang and Ryu, \{Min Ki\} and Byun, \{Chun Won\} and Jung, \{Soon Won\} and Park, \{Sang Hee Ko\} and Hwang, \{Chi Sun\} and Cho, \{Kyoung Ik\}",

note = "Funding Information: Manuscript received October 18, 2010; revised December 23, 2010, February 20, 2011, March 20, 2011, and March 27, 2011; accepted March 29, 2011. Date of publication May 2, 2011; date of current version June 22, 2011. This work was supported by the Industrial Strategic Technology Development program under Project 10035225 (Development of Core Technology for High Performance AMOLED on Plastic) funded by the Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (KEIT). The review of this paper was arranged by Editor J. Kanicki.",

year = "2011",

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doi = "10.1109/TED.2011.2139212",

language = "English",

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T1 - Oxide semiconductor-based organic/inorganic hybrid dual-gate nonvolatile memory thin-film transistor

AU - Yoon, Sung Min

AU - Yang, Shinhyuk

AU - Ryu, Min Ki

AU - Byun, Chun Won

AU - Jung, Soon Won

AU - Park, Sang Hee Ko

AU - Hwang, Chi Sun

AU - Cho, Kyoung Ik

N1 - Funding Information: Manuscript received October 18, 2010; revised December 23, 2010, February 20, 2011, March 20, 2011, and March 27, 2011; accepted March 29, 2011. Date of publication May 2, 2011; date of current version June 22, 2011. This work was supported by the Industrial Strategic Technology Development program under Project 10035225 (Development of Core Technology for High Performance AMOLED on Plastic) funded by the Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (KEIT). The review of this paper was arranged by Editor J. Kanicki.

PY - 2011/7

Y1 - 2011/7

N2 - An organic/inorganic hybrid dual-gate (DG) nonvolatile memory thin-film transistor (M-TFT) was proposed as a device with high potential for implementing large-area electronics on flexible and/or transparent substrates. The active channel and bottom and top gate insulators (GIs) of the M-TFT were composed of InGaZnO, Al2O3, and poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)], respectively. It was confirmed that the fabricated DG M-TFT showed excellent device characteristics, in which the obtained field-effect mobility, subthreshold swing, and on/off ratio were approximately 32.1 cm-2V-1s-1, 0.13 V/dec, and 108, respectively. It was also successfully demonstrated that the DG configuration for the proposed M-TFT could effectively work for improving the device controllability by individually controlling the bias conditions of the top gate and bottom gate (BG). The turn-on voltage could be dynamically modulated and controlled when an appropriate fixed negative voltage was applied to the BG. The required duration of the programming pulse to obtain a memory margin of more than 10 could be reduced to 100 μs. These results correspond to the first demonstration of a hybrid-type DG M-TFT using a ferroelectric copolymer GI/oxide semiconducting active channel structure and demonstrate the feasibility of a promising memory device embeddable in a large-area electronic system.

AB - An organic/inorganic hybrid dual-gate (DG) nonvolatile memory thin-film transistor (M-TFT) was proposed as a device with high potential for implementing large-area electronics on flexible and/or transparent substrates. The active channel and bottom and top gate insulators (GIs) of the M-TFT were composed of InGaZnO, Al2O3, and poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)], respectively. It was confirmed that the fabricated DG M-TFT showed excellent device characteristics, in which the obtained field-effect mobility, subthreshold swing, and on/off ratio were approximately 32.1 cm-2V-1s-1, 0.13 V/dec, and 108, respectively. It was also successfully demonstrated that the DG configuration for the proposed M-TFT could effectively work for improving the device controllability by individually controlling the bias conditions of the top gate and bottom gate (BG). The turn-on voltage could be dynamically modulated and controlled when an appropriate fixed negative voltage was applied to the BG. The required duration of the programming pulse to obtain a memory margin of more than 10 could be reduced to 100 μs. These results correspond to the first demonstration of a hybrid-type DG M-TFT using a ferroelectric copolymer GI/oxide semiconducting active channel structure and demonstrate the feasibility of a promising memory device embeddable in a large-area electronic system.

KW - Dual gate (DG)

KW - InGaZnO (IGZO)

KW - ferroelectric P(VDF-TrFE)

KW - nonvolatile memory

KW - oxide semiconductor

KW - thin-film transistor (TFT)

UR - https://www.scopus.com/pages/publications/79959498647

U2 - 10.1109/TED.2011.2139212

DO - 10.1109/TED.2011.2139212

M3 - Article

AN - SCOPUS:79959498647

SN - 0018-9383

VL - 58

SP - 2135

EP - 2142

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

M1 - 5759768

ER -

Oxide semiconductor-based organic/inorganic hybrid dual-gate nonvolatile memory thin-film transistor

Abstract

Bibliographical note

Keywords

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