P-channel oxide thin film transistors using sol-gel solution processed nickel oxide

Tengda Lin; Xiuling Li; Jin Jang

doi:10.1109/AM-FPD.2015.7173218

P-channel oxide thin film transistors using sol-gel solution processed nickel oxide

Tengda Lin
, Xiuling Li
, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Nickel oxide (NiO) thin film was synthesized on glass substrate by low-cost sol-gel solution process at 300 °C under ambient condition. The optical properties confirmed the high transparency over visible region and estimated optical band gap of 3.53 eV. Bottom-gate top-contact thin film transistors (TFTs) employing NiO film as active layer were fabricated via conventional photolithography. The electrical property of the NiO TFTs exhibited p-channel operation and field effect mobility of 0.077 cm²/V·s. This work reported the potential of NiO TFTs with p-channel characteristics using easily accessed solution process.

Original language	English
Title of host publication	Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	129-130
Number of pages	2
ISBN (Electronic)	9784863484771
DOIs	https://doi.org/10.1109/AM-FPD.2015.7173218
Publication status	Published - 30 Jul 2015
Event	22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015 - Kyoto, Japan Duration: 1 Jul 2015 → 4 Jul 2015

Publication series

Name	Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference	22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015
Country/Territory	Japan
City	Kyoto
Period	1/07/15 → 4/07/15

Bibliographical note

Publisher Copyright:
© 2015 JSAP.

Access to Document

10.1109/AM-FPD.2015.7173218

Cite this

Lin, T., Li, X., & Jang, J. (2015). P-channel oxide thin film transistors using sol-gel solution processed nickel oxide. In Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 129-130). Article 7173218 (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2015.7173218

Lin, Tengda ; Li, Xiuling ; Jang, Jin. / P-channel oxide thin film transistors using sol-gel solution processed nickel oxide. Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 129-130 (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

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title = "P-channel oxide thin film transistors using sol-gel solution processed nickel oxide",

abstract = "Nickel oxide (NiO) thin film was synthesized on glass substrate by low-cost sol-gel solution process at 300 °C under ambient condition. The optical properties confirmed the high transparency over visible region and estimated optical band gap of 3.53 eV. Bottom-gate top-contact thin film transistors (TFTs) employing NiO film as active layer were fabricated via conventional photolithography. The electrical property of the NiO TFTs exhibited p-channel operation and field effect mobility of 0.077 cm2/V·s. This work reported the potential of NiO TFTs with p-channel characteristics using easily accessed solution process.",

author = "Tengda Lin and Xiuling Li and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 2015 JSAP.; 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015 ; Conference date: 01-07-2015 Through 04-07-2015",

year = "2015",

month = jul,

day = "30",

doi = "10.1109/AM-FPD.2015.7173218",

language = "English",

series = "Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "129--130",

booktitle = "Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices",

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Lin, T, Li, X & Jang, J 2015, P-channel oxide thin film transistors using sol-gel solution processed nickel oxide. in Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7173218, Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 129-130, 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015, Kyoto, Japan, 1/07/15. https://doi.org/10.1109/AM-FPD.2015.7173218

P-channel oxide thin film transistors using sol-gel solution processed nickel oxide. / Lin, Tengda; Li, Xiuling; Jang, Jin.
Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2015. p. 129-130 7173218 (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - P-channel oxide thin film transistors using sol-gel solution processed nickel oxide

AU - Lin, Tengda

AU - Li, Xiuling

AU - Jang, Jin

PY - 2015/7/30

Y1 - 2015/7/30

N2 - Nickel oxide (NiO) thin film was synthesized on glass substrate by low-cost sol-gel solution process at 300 °C under ambient condition. The optical properties confirmed the high transparency over visible region and estimated optical band gap of 3.53 eV. Bottom-gate top-contact thin film transistors (TFTs) employing NiO film as active layer were fabricated via conventional photolithography. The electrical property of the NiO TFTs exhibited p-channel operation and field effect mobility of 0.077 cm2/V·s. This work reported the potential of NiO TFTs with p-channel characteristics using easily accessed solution process.

AB - Nickel oxide (NiO) thin film was synthesized on glass substrate by low-cost sol-gel solution process at 300 °C under ambient condition. The optical properties confirmed the high transparency over visible region and estimated optical band gap of 3.53 eV. Bottom-gate top-contact thin film transistors (TFTs) employing NiO film as active layer were fabricated via conventional photolithography. The electrical property of the NiO TFTs exhibited p-channel operation and field effect mobility of 0.077 cm2/V·s. This work reported the potential of NiO TFTs with p-channel characteristics using easily accessed solution process.

UR - https://www.scopus.com/pages/publications/84947920528

U2 - 10.1109/AM-FPD.2015.7173218

DO - 10.1109/AM-FPD.2015.7173218

M3 - Conference contribution

AN - SCOPUS:84947920528

T3 - Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

SP - 129

EP - 130

BT - Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015

Y2 - 1 July 2015 through 4 July 2015

ER -

Lin T, Li X, Jang J. P-channel oxide thin film transistors using sol-gel solution processed nickel oxide. In Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2015. p. 129-130. 7173218. (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2015.7173218

P-channel oxide thin film transistors using sol-gel solution processed nickel oxide

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