Parameterization of the Dielectric Function of GaAsSb Alloy Films

Tae Jung Kim; Van Long Le; Hoang Tung Nguyen; Xuan Au Nguyen; Bogyu Kim; Young Dong Kim

doi:10.3938/jkps.77.840

Parameterization of the Dielectric Function of GaAsSb Alloy Films

Tae Jung Kim
, Van Long Le
, Hoang Tung Nguyen
, Xuan Au Nguyen
, Bogyu Kim
, Young Dong Kim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The GaAs_xSb_1−x; alloys are particularly promising materials for near-infrared light-emitting diode and detector devices. The optical properties, such as the dielectric function, complex refractive index, and absorption coefficient, are needed to properly design and understand semiconductor devices. Here, we report a method to obtain the optical properties of GaAs_xSb_1−x for the energy range from 1.5 to 6 eV and for an As composition from 0 to 1 at arbitrary wavelengths and compositions. The parameterization of the dielectric function of GaAs_xSb_1−x for specific compositions at x = 0, 0.183, 0.397, 0.528, 0.8, and 1 were realized by using the dielectric function parametric model.

Original language	English
Pages (from-to)	840-844
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	77
Issue number	10
DOIs	https://doi.org/10.3938/jkps.77.840
Publication status	Published - Nov 2020

Bibliographical note

Publisher Copyright:
© 2020, The Korean Physical Society.

Keywords

Absorption coefficient
Complex refractive index
Dielectric function
Dielectric function parametric model
GaAsSb

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10.3938/jkps.77.840

Cite this

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title = "Parameterization of the Dielectric Function of GaAsSb Alloy Films",

abstract = "The GaAsxSb1−x; alloys are particularly promising materials for near-infrared light-emitting diode and detector devices. The optical properties, such as the dielectric function, complex refractive index, and absorption coefficient, are needed to properly design and understand semiconductor devices. Here, we report a method to obtain the optical properties of GaAsxSb1−x for the energy range from 1.5 to 6 eV and for an As composition from 0 to 1 at arbitrary wavelengths and compositions. The parameterization of the dielectric function of GaAsxSb1−x for specific compositions at x = 0, 0.183, 0.397, 0.528, 0.8, and 1 were realized by using the dielectric function parametric model.",

keywords = "Absorption coefficient, Complex refractive index, Dielectric function, Dielectric function parametric model, GaAsSb",

author = "Kim, \{Tae Jung\} and Le, \{Van Long\} and Nguyen, \{Hoang Tung\} and Nguyen, \{Xuan Au\} and Bogyu Kim and Kim, \{Young Dong\}",

note = "Publisher Copyright: {\textcopyright} 2020, The Korean Physical Society.",

year = "2020",

month = nov,

doi = "10.3938/jkps.77.840",

language = "English",

volume = "77",

pages = "840--844",

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TY - JOUR

T1 - Parameterization of the Dielectric Function of GaAsSb Alloy Films

AU - Kim, Tae Jung

AU - Le, Van Long

AU - Nguyen, Hoang Tung

AU - Nguyen, Xuan Au

AU - Kim, Bogyu

AU - Kim, Young Dong

PY - 2020/11

Y1 - 2020/11

N2 - The GaAsxSb1−x; alloys are particularly promising materials for near-infrared light-emitting diode and detector devices. The optical properties, such as the dielectric function, complex refractive index, and absorption coefficient, are needed to properly design and understand semiconductor devices. Here, we report a method to obtain the optical properties of GaAsxSb1−x for the energy range from 1.5 to 6 eV and for an As composition from 0 to 1 at arbitrary wavelengths and compositions. The parameterization of the dielectric function of GaAsxSb1−x for specific compositions at x = 0, 0.183, 0.397, 0.528, 0.8, and 1 were realized by using the dielectric function parametric model.

AB - The GaAsxSb1−x; alloys are particularly promising materials for near-infrared light-emitting diode and detector devices. The optical properties, such as the dielectric function, complex refractive index, and absorption coefficient, are needed to properly design and understand semiconductor devices. Here, we report a method to obtain the optical properties of GaAsxSb1−x for the energy range from 1.5 to 6 eV and for an As composition from 0 to 1 at arbitrary wavelengths and compositions. The parameterization of the dielectric function of GaAsxSb1−x for specific compositions at x = 0, 0.183, 0.397, 0.528, 0.8, and 1 were realized by using the dielectric function parametric model.

KW - Absorption coefficient

KW - Complex refractive index

KW - Dielectric function

KW - Dielectric function parametric model

KW - GaAsSb

UR - https://www.scopus.com/pages/publications/85096326139

U2 - 10.3938/jkps.77.840

DO - 10.3938/jkps.77.840

M3 - Article

AN - SCOPUS:85096326139

SN - 0374-4884

VL - 77

SP - 840

EP - 844

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 10

ER -

Parameterization of the Dielectric Function of GaAsSb Alloy Films

Abstract

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Keywords

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