Parametric modeling of the dielectric functions of Cd1-xMg xTe alloy films

Y. S. Ihn; T. J. Kim; T. H. Ghong; Y. D. Kim; D. E. Aspnes; J. Kossut

doi:10.1016/j.tsf.2004.01.015

Parametric modeling of the dielectric functions of Cd_1-xMg _xTe alloy films

Y. S. Ihn, T. J. Kim, T. H. Ghong, Y. D. Kim, D. E. Aspnes, J. Kossut

Research output: Contribution to journal › Conference article › peer-review

33 Citations (Scopus)

Abstract

We report of parameters by which one can construct dielectric functions of Cd_1-xMg_xTe alloy films for any composition x (0≤x≦0.43) in the energy range 1.5-6.0 eV using the parametric semiconductor model. The parametric model describes analytically the dielectric functions of semiconductor materials as a sum of Gaussian-broadened polynomials and provides a reasonably accurate representation. The dielectric function spectra we used as a basis were obtained on films with Mg compositions x=0.00, 0.23, 0.31 and 0.43, with overlayer effects minimized by chemical etching. The appearance of well-defined interference-oscillation patterns below the E ₀ bandgap and the excellent separation of the E₂ peaks confirm that the dielectric functions constructed in this work represent the best room-temperature optical responses of Cd_1-xMg_xTe alloys (0.00≤x=0.4) from 1.5 to 6.0 eV to date.

Original language	English
Pages (from-to)	222-227
Number of pages	6
Journal	Thin Solid Films
Volume	455-456
DOIs	https://doi.org/10.1016/j.tsf.2004.01.015
Publication status	Published - 1 May 2004
Event	The 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria Duration: 6 Jul 2003 → 11 Jul 2003

Bibliographical note

Funding Information:
This work was supported by grant No. R02-2003-000-10074-0 from the Basic Research Program of the Korea Science and Engineering Foundation. This work is also supported by the Quantum Photonic Science Research Center at Hanyang University and by the National Research Laboratory Fund through Compound Semiconductor Epitaxy Laboratory. The work at North Carolina State University was supported by the Office of Naval Research. The work in Poland was performed as a part of activity of the Center of Excellence CELDIS (EC contract ICAT-CT-2000-70018).

Keywords

CdMgTe
Chemical etching
Dielectric functions

Access to Document

10.1016/j.tsf.2004.01.015

Cite this

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title = "Parametric modeling of the dielectric functions of Cd1-xMg xTe alloy films",

abstract = "We report of parameters by which one can construct dielectric functions of Cd1-xMgxTe alloy films for any composition x (0≤x≦0.43) in the energy range 1.5-6.0 eV using the parametric semiconductor model. The parametric model describes analytically the dielectric functions of semiconductor materials as a sum of Gaussian-broadened polynomials and provides a reasonably accurate representation. The dielectric function spectra we used as a basis were obtained on films with Mg compositions x=0.00, 0.23, 0.31 and 0.43, with overlayer effects minimized by chemical etching. The appearance of well-defined interference-oscillation patterns below the E 0 bandgap and the excellent separation of the E2 peaks confirm that the dielectric functions constructed in this work represent the best room-temperature optical responses of Cd1-xMgxTe alloys (0.00≤x=0.4) from 1.5 to 6.0 eV to date.",

keywords = "CdMgTe, Chemical etching, Dielectric functions",

author = "Ihn, {Y. S.} and Kim, {T. J.} and Ghong, {T. H.} and Kim, {Y. D.} and Aspnes, {D. E.} and J. Kossut",

note = "Funding Information: This work was supported by grant No. R02-2003-000-10074-0 from the Basic Research Program of the Korea Science and Engineering Foundation. This work is also supported by the Quantum Photonic Science Research Center at Hanyang University and by the National Research Laboratory Fund through Compound Semiconductor Epitaxy Laboratory. The work at North Carolina State University was supported by the Office of Naval Research. The work in Poland was performed as a part of activity of the Center of Excellence CELDIS (EC contract ICAT-CT-2000-70018).; The 3rd International Conference on Spectroscopic Ellipsometry ; Conference date: 06-07-2003 Through 11-07-2003",

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doi = "10.1016/j.tsf.2004.01.015",

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T1 - Parametric modeling of the dielectric functions of Cd1-xMg xTe alloy films

AU - Ihn, Y. S.

AU - Kim, T. J.

AU - Ghong, T. H.

AU - Kim, Y. D.

AU - Aspnes, D. E.

AU - Kossut, J.

N1 - Funding Information: This work was supported by grant No. R02-2003-000-10074-0 from the Basic Research Program of the Korea Science and Engineering Foundation. This work is also supported by the Quantum Photonic Science Research Center at Hanyang University and by the National Research Laboratory Fund through Compound Semiconductor Epitaxy Laboratory. The work at North Carolina State University was supported by the Office of Naval Research. The work in Poland was performed as a part of activity of the Center of Excellence CELDIS (EC contract ICAT-CT-2000-70018).

PY - 2004/5/1

Y1 - 2004/5/1

N2 - We report of parameters by which one can construct dielectric functions of Cd1-xMgxTe alloy films for any composition x (0≤x≦0.43) in the energy range 1.5-6.0 eV using the parametric semiconductor model. The parametric model describes analytically the dielectric functions of semiconductor materials as a sum of Gaussian-broadened polynomials and provides a reasonably accurate representation. The dielectric function spectra we used as a basis were obtained on films with Mg compositions x=0.00, 0.23, 0.31 and 0.43, with overlayer effects minimized by chemical etching. The appearance of well-defined interference-oscillation patterns below the E 0 bandgap and the excellent separation of the E2 peaks confirm that the dielectric functions constructed in this work represent the best room-temperature optical responses of Cd1-xMgxTe alloys (0.00≤x=0.4) from 1.5 to 6.0 eV to date.

AB - We report of parameters by which one can construct dielectric functions of Cd1-xMgxTe alloy films for any composition x (0≤x≦0.43) in the energy range 1.5-6.0 eV using the parametric semiconductor model. The parametric model describes analytically the dielectric functions of semiconductor materials as a sum of Gaussian-broadened polynomials and provides a reasonably accurate representation. The dielectric function spectra we used as a basis were obtained on films with Mg compositions x=0.00, 0.23, 0.31 and 0.43, with overlayer effects minimized by chemical etching. The appearance of well-defined interference-oscillation patterns below the E 0 bandgap and the excellent separation of the E2 peaks confirm that the dielectric functions constructed in this work represent the best room-temperature optical responses of Cd1-xMgxTe alloys (0.00≤x=0.4) from 1.5 to 6.0 eV to date.

KW - CdMgTe

KW - Chemical etching

KW - Dielectric functions

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DO - 10.1016/j.tsf.2004.01.015

M3 - Conference article

AN - SCOPUS:17144461545

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