Passivation effect of heterojunction solar cells by amorphous silicon oxide film manufactured using silane and nitrous oxide

Deok Yeol Kim; Jin Hyuk Jung; Jin Jang

doi:10.1109/PVSC.2011.6186235

Passivation effect of heterojunction solar cells by amorphous silicon oxide film manufactured using silane and nitrous oxide

Deok Yeol Kim
, Jin Hyuk Jung
, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Hydrogenated amorphous silicon oxide (a-SiO:H) deposited by plasma-enhanced chemical vapor deposition(PECVD) using a mixture of silane (SiH ₄), hydrogen (H ₂), and nitrous oxide (N ₂O) at a low substrate temperature were used as passivation layers for heterojunction solar cells. The ratio of SiH ₄ to N ₂O and annealing time were optimized. The heterojunction solar cells manufactured under the optimum conditions exhibited the power conversion efficiency of >17 %.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	1465-1467
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2011.6186235
Publication status	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

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10.1109/PVSC.2011.6186235

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Kim, D. Y., Jung, J. H., & Jang, J. (2011). Passivation effect of heterojunction solar cells by amorphous silicon oxide film manufactured using silane and nitrous oxide. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 1465-1467). Article 6186235 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186235

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title = "Passivation effect of heterojunction solar cells by amorphous silicon oxide film manufactured using silane and nitrous oxide",

abstract = "Hydrogenated amorphous silicon oxide (a-SiO:H) deposited by plasma-enhanced chemical vapor deposition(PECVD) using a mixture of silane (SiH 4), hydrogen (H 2), and nitrous oxide (N 2O) at a low substrate temperature were used as passivation layers for heterojunction solar cells. The ratio of SiH 4 to N 2O and annealing time were optimized. The heterojunction solar cells manufactured under the optimum conditions exhibited the power conversion efficiency of >17 \%.",

author = "Kim, \{Deok Yeol\} and Jung, \{Jin Hyuk\} and Jin Jang",

year = "2011",

doi = "10.1109/PVSC.2011.6186235",

language = "English",

isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "1465--1467",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

}

Kim, DY, Jung, JH & Jang, J 2011, Passivation effect of heterojunction solar cells by amorphous silicon oxide film manufactured using silane and nitrous oxide. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186235, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1465-1467, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/06/11. https://doi.org/10.1109/PVSC.2011.6186235

Passivation effect of heterojunction solar cells by amorphous silicon oxide film manufactured using silane and nitrous oxide. / Kim, Deok Yeol; Jung, Jin Hyuk; Jang, Jin.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 1465-1467 6186235 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Passivation effect of heterojunction solar cells by amorphous silicon oxide film manufactured using silane and nitrous oxide

AU - Kim, Deok Yeol

AU - Jung, Jin Hyuk

AU - Jang, Jin

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N2 - Hydrogenated amorphous silicon oxide (a-SiO:H) deposited by plasma-enhanced chemical vapor deposition(PECVD) using a mixture of silane (SiH 4), hydrogen (H 2), and nitrous oxide (N 2O) at a low substrate temperature were used as passivation layers for heterojunction solar cells. The ratio of SiH 4 to N 2O and annealing time were optimized. The heterojunction solar cells manufactured under the optimum conditions exhibited the power conversion efficiency of >17 %.

AB - Hydrogenated amorphous silicon oxide (a-SiO:H) deposited by plasma-enhanced chemical vapor deposition(PECVD) using a mixture of silane (SiH 4), hydrogen (H 2), and nitrous oxide (N 2O) at a low substrate temperature were used as passivation layers for heterojunction solar cells. The ratio of SiH 4 to N 2O and annealing time were optimized. The heterojunction solar cells manufactured under the optimum conditions exhibited the power conversion efficiency of >17 %.

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DO - 10.1109/PVSC.2011.6186235

M3 - Conference contribution

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

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Y2 - 19 June 2011 through 24 June 2011

ER -

Passivation effect of heterojunction solar cells by amorphous silicon oxide film manufactured using silane and nitrous oxide

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