Performance improvement of scaled-down top-contact OTFTs by two-step-deposition of pentacene

Sung Hun Jin; Keum Dong Jung; Hyungcheol Shin; Byung Gook Park; Jong Duk Lee

doi:10.1889/1.2036428

Performance improvement of scaled-down top-contact OTFTs by two-step-deposition of pentacene

Sung Hun Jin, Keum Dong Jung, Hyungcheol Shin, Byung Gook Park, Jong Duk Lee

Research output: Contribution to journal › Conference article › peer-review

Abstract

Top-contact pentacene TFTs were successfully scaled down from 20 μm to 1.8 μm for the channel length (L_C) by using silicon nitride membrane shadow mask. When L_C was reduced to 1.8 μm, pentacene TFTs with the grain size of a few micrometer showed poor on/off current ratio (I_on/I_off) of 10³ and high mobility of 0.25 cm²/Vsec, whereas pentacene TFTs with the grain size of sub-micrometer resulted in low mobility of 0.08 cm²/Vsec, but good I_on/I_off of 5.7×10⁶. To obtain both high mobility and good I_on/I_off for the scaled-down OTFTs at the same time, two-step-deposition (TSD) technique was proposed and resulted in I_on/I_off of 10⁷ as well as mobility of 0.19 cm²/Vsec even for the TFT with L_C of 1.8 μm. To our best knowledge, this result is one of the best electrical characteristics among the reported electrical performance of OTFTs scaled down to L_C of 1.8 μm.

Original language	English
Article number	P-18
Pages (from-to)	292-295
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	36
Issue number	1
DOIs	https://doi.org/10.1889/1.2036428
Publication status	Published - 2005
Event	SID Symposium Digest of Technical Papers - Boston, MA, United States Duration: 29 Jul 2004 → 29 Jul 2004

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title = "Performance improvement of scaled-down top-contact OTFTs by two-step-deposition of pentacene",

abstract = "Top-contact pentacene TFTs were successfully scaled down from 20 μm to 1.8 μm for the channel length (LC) by using silicon nitride membrane shadow mask. When LC was reduced to 1.8 μm, pentacene TFTs with the grain size of a few micrometer showed poor on/off current ratio (Ion/Ioff) of 103 and high mobility of 0.25 cm2/Vsec, whereas pentacene TFTs with the grain size of sub-micrometer resulted in low mobility of 0.08 cm2/Vsec, but good Ion/Ioff of 5.7×106. To obtain both high mobility and good Ion/Ioff for the scaled-down OTFTs at the same time, two-step-deposition (TSD) technique was proposed and resulted in Ion/Ioff of 107 as well as mobility of 0.19 cm2/Vsec even for the TFT with LC of 1.8 μm. To our best knowledge, this result is one of the best electrical characteristics among the reported electrical performance of OTFTs scaled down to LC of 1.8 μm.",

author = "Jin, {Sung Hun} and Jung, {Keum Dong} and Hyungcheol Shin and Park, {Byung Gook} and Lee, {Jong Duk}",

year = "2005",

doi = "10.1889/1.2036428",

language = "English",

volume = "36",

pages = "292--295",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc.",

number = "1",

note = "SID Symposium Digest of Technical Papers ; Conference date: 29-07-2004 Through 29-07-2004",

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T1 - Performance improvement of scaled-down top-contact OTFTs by two-step-deposition of pentacene

AU - Jin, Sung Hun

AU - Jung, Keum Dong

AU - Shin, Hyungcheol

AU - Park, Byung Gook

AU - Lee, Jong Duk

PY - 2005

Y1 - 2005

N2 - Top-contact pentacene TFTs were successfully scaled down from 20 μm to 1.8 μm for the channel length (LC) by using silicon nitride membrane shadow mask. When LC was reduced to 1.8 μm, pentacene TFTs with the grain size of a few micrometer showed poor on/off current ratio (Ion/Ioff) of 103 and high mobility of 0.25 cm2/Vsec, whereas pentacene TFTs with the grain size of sub-micrometer resulted in low mobility of 0.08 cm2/Vsec, but good Ion/Ioff of 5.7×106. To obtain both high mobility and good Ion/Ioff for the scaled-down OTFTs at the same time, two-step-deposition (TSD) technique was proposed and resulted in Ion/Ioff of 107 as well as mobility of 0.19 cm2/Vsec even for the TFT with LC of 1.8 μm. To our best knowledge, this result is one of the best electrical characteristics among the reported electrical performance of OTFTs scaled down to LC of 1.8 μm.

AB - Top-contact pentacene TFTs were successfully scaled down from 20 μm to 1.8 μm for the channel length (LC) by using silicon nitride membrane shadow mask. When LC was reduced to 1.8 μm, pentacene TFTs with the grain size of a few micrometer showed poor on/off current ratio (Ion/Ioff) of 103 and high mobility of 0.25 cm2/Vsec, whereas pentacene TFTs with the grain size of sub-micrometer resulted in low mobility of 0.08 cm2/Vsec, but good Ion/Ioff of 5.7×106. To obtain both high mobility and good Ion/Ioff for the scaled-down OTFTs at the same time, two-step-deposition (TSD) technique was proposed and resulted in Ion/Ioff of 107 as well as mobility of 0.19 cm2/Vsec even for the TFT with LC of 1.8 μm. To our best knowledge, this result is one of the best electrical characteristics among the reported electrical performance of OTFTs scaled down to LC of 1.8 μm.

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VL - 36

SP - 292

EP - 295

JO - Digest of Technical Papers - SID International Symposium

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IS - 1

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T2 - SID Symposium Digest of Technical Papers

Y2 - 29 July 2004 through 29 July 2004

ER -

Performance improvement of scaled-down top-contact OTFTs by two-step-deposition of pentacene

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