Persistent photoconductivity in hydrogenated amorphous silicon

Suk Ho Choi, Gyeong Lyong Park, Choochon Lee, Jin Jang

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The persistent photoconductivity (PPC) has been observed in undoped, phosphorus-doped, and boron-doped hydrogenated amorphous silicon (a-Si: H) films. As the annealing temperature is raised for these films the decay of residual conductivity is accelerated and the PPC disappears almost completely after annealing at 500°C. These experimental results rule out the mechanism requiring the phosphorus-boron complexes or the deep defects. The PPC is found to be related with the sample inhomogeneity from the experimental observation that the decay of residual conductivity is closely correlated with the microstructure. A model is proposed to explain the PPC in a-Si: H films.

Original languageEnglish
Pages (from-to)177-181
Number of pages5
JournalSolid State Communications
Volume59
Issue number3
DOIs
Publication statusPublished - Jul 1986

Fingerprint

Dive into the research topics of 'Persistent photoconductivity in hydrogenated amorphous silicon'. Together they form a unique fingerprint.

Cite this