Phase transition characteristics and device performance of Sn-doped Ge 2Sb2Te5 in phase change random access memory

Tae Jin Park; Dae Hyun Kim; Sung Min Yoon; Kyu Jeong Choi; Nam Yeal Lee; Byoung Gon Yu; Se Young Choi

doi:10.1143/JJAP.45.L1273

Phase transition characteristics and device performance of Sn-doped Ge ₂Sb₂Te₅ in phase change random access memory

Tae Jin Park
, Dae Hyun Kim
, Sung Min Yoon
, Kyu Jeong Choi
, Nam Yeal Lee
, Byoung Gon Yu
, Se Young Choi

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Sn was employed in Ge₂Sb₂Te₅ to accelerate operation speed of phase change random access memory (PRAM). Crystallized Sn-doped Ge₂Sb₂Te₅ showed face centered cubic (fee) or hexagonal close packed (hcp) structures upon heat treatment, which was similar to that of Ge₂Sb₂Te₅. However, Sn doping increased the phase transformation temperature to hcp of Ge ₂Sb₂Te₂. 17 at. % Sn-doped Ge ₂Sb₂Te₅ had an accelerated crystallization under laser irradiation and moreover, showed decreased operation time of PRAM compared to that of Ge₂Sb₂Te₅. In addition, 17 at. % Sn-doped Ge₂Sb₂Te₅ showed stable and reversible device performance.

Original language	English
Pages (from-to)	L1273-L1276
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	46-50
DOIs	https://doi.org/10.1143/JJAP.45.L1273
Publication status	Published - Dec 2006

Keywords

Electrical properties of amorphous semiconductor
Laser-induced crystallization
PRAM
Phase change material
Sn-doped GeSbTe

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10.1143/JJAP.45.L1273

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title = "Phase transition characteristics and device performance of Sn-doped Ge 2Sb2Te5 in phase change random access memory",

abstract = "Sn was employed in Ge2Sb2Te5 to accelerate operation speed of phase change random access memory (PRAM). Crystallized Sn-doped Ge2Sb2Te5 showed face centered cubic (fee) or hexagonal close packed (hcp) structures upon heat treatment, which was similar to that of Ge2Sb2Te5. However, Sn doping increased the phase transformation temperature to hcp of Ge 2Sb2Te2. 17 at. \% Sn-doped Ge 2Sb2Te5 had an accelerated crystallization under laser irradiation and moreover, showed decreased operation time of PRAM compared to that of Ge2Sb2Te5. In addition, 17 at. \% Sn-doped Ge2Sb2Te5 showed stable and reversible device performance.",

keywords = "Electrical properties of amorphous semiconductor, Laser-induced crystallization, PRAM, Phase change material, Sn-doped GeSbTe",

author = "Park, \{Tae Jin\} and Kim, \{Dae Hyun\} and Yoon, \{Sung Min\} and Choi, \{Kyu Jeong\} and Lee, \{Nam Yeal\} and Yu, \{Byoung Gon\} and Choi, \{Se Young\}",

year = "2006",

month = dec,

doi = "10.1143/JJAP.45.L1273",

language = "English",

volume = "45",

pages = "L1273--L1276",

journal = "Japanese Journal of Applied Physics",

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TY - JOUR

T1 - Phase transition characteristics and device performance of Sn-doped Ge 2Sb2Te5 in phase change random access memory

AU - Park, Tae Jin

AU - Kim, Dae Hyun

AU - Yoon, Sung Min

AU - Choi, Kyu Jeong

AU - Lee, Nam Yeal

AU - Yu, Byoung Gon

AU - Choi, Se Young

PY - 2006/12

Y1 - 2006/12

N2 - Sn was employed in Ge2Sb2Te5 to accelerate operation speed of phase change random access memory (PRAM). Crystallized Sn-doped Ge2Sb2Te5 showed face centered cubic (fee) or hexagonal close packed (hcp) structures upon heat treatment, which was similar to that of Ge2Sb2Te5. However, Sn doping increased the phase transformation temperature to hcp of Ge 2Sb2Te2. 17 at. % Sn-doped Ge 2Sb2Te5 had an accelerated crystallization under laser irradiation and moreover, showed decreased operation time of PRAM compared to that of Ge2Sb2Te5. In addition, 17 at. % Sn-doped Ge2Sb2Te5 showed stable and reversible device performance.

AB - Sn was employed in Ge2Sb2Te5 to accelerate operation speed of phase change random access memory (PRAM). Crystallized Sn-doped Ge2Sb2Te5 showed face centered cubic (fee) or hexagonal close packed (hcp) structures upon heat treatment, which was similar to that of Ge2Sb2Te5. However, Sn doping increased the phase transformation temperature to hcp of Ge 2Sb2Te2. 17 at. % Sn-doped Ge 2Sb2Te5 had an accelerated crystallization under laser irradiation and moreover, showed decreased operation time of PRAM compared to that of Ge2Sb2Te5. In addition, 17 at. % Sn-doped Ge2Sb2Te5 showed stable and reversible device performance.

KW - Electrical properties of amorphous semiconductor

KW - Laser-induced crystallization

KW - PRAM

KW - Phase change material

KW - Sn-doped GeSbTe

UR - https://www.scopus.com/pages/publications/34547837869

U2 - 10.1143/JJAP.45.L1273

DO - 10.1143/JJAP.45.L1273

M3 - Article

AN - SCOPUS:34547837869

SN - 0021-4922

VL - 45

SP - L1273-L1276

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 46-50

ER -

Phase transition characteristics and device performance of Sn-doped Ge ₂Sb₂Te₅ in phase change random access memory

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