Phenyl-naphthyl amine effect of new phenothiazine derivatives with high T g for hole injection and hole transporting materials

Soo Kang Kim; Ji Hoon Lee; Jong Wook Park

doi:10.1166/jnn.2008.1015

Phenyl-naphthyl amine effect of new phenothiazine derivatives with high T _g for hole injection and hole transporting materials

Soo Kang Kim
, Ji Hoon Lee
, Jong Wook Park

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazylbenzene [DPtzB], 3,7,3 "7"-tetrakis(N-phenyl-2- naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high 7" _g in the range of 175-202 °C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm ².

Original language	English
Pages (from-to)	5247-5251
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	8
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2008.1015
Publication status	Published - Oct 2008

Keywords

Electroluminescence
Glass-Transition Temperature (T )
Hole-Transporting
OLED
Phenothiazine

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10.1166/jnn.2008.1015

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title = "Phenyl-naphthyl amine effect of new phenothiazine derivatives with high T g for hole injection and hole transporting materials",

abstract = "We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazylbenzene [DPtzB], 3,7,3 {"}7{"}-tetrakis(N-phenyl-2- naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high 7{"} g in the range of 175-202 °C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm 2.",

keywords = "Electroluminescence, Glass-Transition Temperature (T ), Hole-Transporting, OLED, Phenothiazine",

author = "Kim, \{Soo Kang\} and Lee, \{Ji Hoon\} and Park, \{Jong Wook\}",

year = "2008",

month = oct,

doi = "10.1166/jnn.2008.1015",

language = "English",

volume = "8",

pages = "5247--5251",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

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TY - JOUR

T1 - Phenyl-naphthyl amine effect of new phenothiazine derivatives with high T g for hole injection and hole transporting materials

AU - Kim, Soo Kang

AU - Lee, Ji Hoon

AU - Park, Jong Wook

PY - 2008/10

Y1 - 2008/10

N2 - We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazylbenzene [DPtzB], 3,7,3 "7"-tetrakis(N-phenyl-2- naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high 7" g in the range of 175-202 °C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm 2.

AB - We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazylbenzene [DPtzB], 3,7,3 "7"-tetrakis(N-phenyl-2- naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high 7" g in the range of 175-202 °C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm 2.

KW - Electroluminescence

KW - Glass-Transition Temperature (T )

KW - Hole-Transporting

KW - OLED

KW - Phenothiazine

UR - https://www.scopus.com/pages/publications/58149286377

U2 - 10.1166/jnn.2008.1015

DO - 10.1166/jnn.2008.1015

M3 - Article

C2 - 19198431

AN - SCOPUS:58149286377

SN - 1533-4880

VL - 8

SP - 5247

EP - 5251

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 10

ER -

Phenyl-naphthyl amine effect of new phenothiazine derivatives with high T _g for hole injection and hole transporting materials

Abstract

Keywords

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