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Photon-enhanced bias instability of InGaZnO TFT with dual gate structure

  • Minki Ryu
  • , Sang Hee Ko Park
  • , Chi Sun Hwang
  • , Sung Min Yoon
  • , Chunwon Byun
  • , Byeong Hoon Kim
  • , Oh Sang Kwon
  • , Eun Suk Park
  • , Shinhyuk Yang
  • , Himchan Oh
  • , Kyounghwan Kim
  • , Kyoung Ik Cho

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have fabricated dual gate IGZO TFT to investigate the photo-enhanced bias instability of IGZO TFT. Contrary to the single gate device in a bottom gate and top gate structure, the dual mode device showed less Vth shift under the visible white light illumination with negative bias stress. We attributed this less negative Vth shift to the reduced hole or positive charged species trapping at the interface due to the reduced effective gate field in the dual gate oxide TFT.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages226-227
Number of pages2
Publication statusPublished - 2010
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 11 Oct 201015 Oct 2010

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Conference

Conference10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/TerritoryKorea, Republic of
CitySeoul
Period11/10/1015/10/10

Keywords

  • Dual gate
  • Oxide TFT
  • Photo-enhanced bias instability

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