Plasma-enhanced atomic layer deposited HfO2 films using a novel heteroleptic cyclopentadienyl-based Hf precursor

Ji hoon Baek; Wan ho Choi; Hohoon Kim; Seonghak Cheon; Younghun Byun; Woojin Jeon; Jin Seong Park

doi:10.1016/j.ceramint.2021.07.065

Plasma-enhanced atomic layer deposited HfO₂ films using a novel heteroleptic cyclopentadienyl-based Hf precursor

Ji hoon Baek
, Wan ho Choi
, Hohoon Kim
, Seonghak Cheon
, Younghun Byun
, Woojin Jeon
, Jin Seong Park

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Plasma-enhanced atomic layer deposition of HfO₂ films using a novel (η⁵:η¹- Cp(CH₂)₂NMe)Hf(NEtMe)₂ (MAP-Hf01) precursor and Ar/O₂ plasma as a co-reactant was studied. Saturated atomic layer deposition with nearly constant growth per cycle of 0.65 Å/cycle was observed and the O/Hf ratio was similar to that of bulk HfO₂ at deposition temperatures ranging from 200 °C to 400 °C. With increasing HfO₂ deposition temperature, the crystallinity and density of the HfO₂ film also increased; however, the concentration of OH-related defects and surface roughness showed the opposite tendency. Notably, HfO₂ film deposited at 400 °C exhibited the lowest level of hafnium suboxide (HfO_x) and the highest crystallinity in monoclinic phase. The high-quality HfO₂ films produced over a well-defined ALD window demonstrate that MAP-Hf01 is a promising candidate for deposition of HfO₂ in advanced microelectronics.

Original language	English
Pages (from-to)	29030-29035
Number of pages	6
Journal	Ceramics International
Volume	47
Issue number	20
DOIs	https://doi.org/10.1016/j.ceramint.2021.07.065
Publication status	Published - 15 Oct 2021

Bibliographical note

Publisher Copyright:
© 2021

Keywords

(η:η- Cp(CH)NMe)Hf(NEtMe) (MAP-Hf01)
Hafnium oxide
Plasma-enhanced atomic layer deposition (PEALD)

Access to Document

10.1016/j.ceramint.2021.07.065

Cite this

@article{16d39eb61c78499783b6a0bebf8b386b,

title = "Plasma-enhanced atomic layer deposited HfO2 films using a novel heteroleptic cyclopentadienyl-based Hf precursor",

abstract = "Plasma-enhanced atomic layer deposition of HfO2 films using a novel (η5:η1- Cp(CH2)2NMe)Hf(NEtMe)2 (MAP-Hf01) precursor and Ar/O2 plasma as a co-reactant was studied. Saturated atomic layer deposition with nearly constant growth per cycle of 0.65 {\AA}/cycle was observed and the O/Hf ratio was similar to that of bulk HfO2 at deposition temperatures ranging from 200 °C to 400 °C. With increasing HfO2 deposition temperature, the crystallinity and density of the HfO2 film also increased; however, the concentration of OH-related defects and surface roughness showed the opposite tendency. Notably, HfO2 film deposited at 400 °C exhibited the lowest level of hafnium suboxide (HfOx) and the highest crystallinity in monoclinic phase. The high-quality HfO2 films produced over a well-defined ALD window demonstrate that MAP-Hf01 is a promising candidate for deposition of HfO2 in advanced microelectronics.",

keywords = "(η:η- Cp(CH)NMe)Hf(NEtMe) (MAP-Hf01), Hafnium oxide, Plasma-enhanced atomic layer deposition (PEALD)",

author = "Baek, \{Ji hoon\} and Choi, \{Wan ho\} and Hohoon Kim and Seonghak Cheon and Younghun Byun and Woojin Jeon and Park, \{Jin Seong\}",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2021",

month = oct,

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doi = "10.1016/j.ceramint.2021.07.065",

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AU - Baek, Ji hoon

AU - Choi, Wan ho

AU - Kim, Hohoon

AU - Cheon, Seonghak

AU - Byun, Younghun

AU - Jeon, Woojin

AU - Park, Jin Seong

PY - 2021/10/15

Y1 - 2021/10/15

N2 - Plasma-enhanced atomic layer deposition of HfO2 films using a novel (η5:η1- Cp(CH2)2NMe)Hf(NEtMe)2 (MAP-Hf01) precursor and Ar/O2 plasma as a co-reactant was studied. Saturated atomic layer deposition with nearly constant growth per cycle of 0.65 Å/cycle was observed and the O/Hf ratio was similar to that of bulk HfO2 at deposition temperatures ranging from 200 °C to 400 °C. With increasing HfO2 deposition temperature, the crystallinity and density of the HfO2 film also increased; however, the concentration of OH-related defects and surface roughness showed the opposite tendency. Notably, HfO2 film deposited at 400 °C exhibited the lowest level of hafnium suboxide (HfOx) and the highest crystallinity in monoclinic phase. The high-quality HfO2 films produced over a well-defined ALD window demonstrate that MAP-Hf01 is a promising candidate for deposition of HfO2 in advanced microelectronics.

AB - Plasma-enhanced atomic layer deposition of HfO2 films using a novel (η5:η1- Cp(CH2)2NMe)Hf(NEtMe)2 (MAP-Hf01) precursor and Ar/O2 plasma as a co-reactant was studied. Saturated atomic layer deposition with nearly constant growth per cycle of 0.65 Å/cycle was observed and the O/Hf ratio was similar to that of bulk HfO2 at deposition temperatures ranging from 200 °C to 400 °C. With increasing HfO2 deposition temperature, the crystallinity and density of the HfO2 film also increased; however, the concentration of OH-related defects and surface roughness showed the opposite tendency. Notably, HfO2 film deposited at 400 °C exhibited the lowest level of hafnium suboxide (HfOx) and the highest crystallinity in monoclinic phase. The high-quality HfO2 films produced over a well-defined ALD window demonstrate that MAP-Hf01 is a promising candidate for deposition of HfO2 in advanced microelectronics.

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KW - Plasma-enhanced atomic layer deposition (PEALD)

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