Polycrystalline silicon film deposited at 300 °C

Jae Hyoung Yoon; Sang Hyung Lim; Byeong Yeon Moon; Jin Jang

Polycrystalline silicon film deposited at 300 °C

Jae Hyoung Yoon
, Sang Hyung Lim
, Byeong Yeon Moon
, Jin Jang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Fabrication of polycrystalline silicon has been studied by inductively coupled plasma chemical vapor deposition (ICP-CVD) using a SiH ₂ Cl ₂/SiH ₄/H ₂ gas mixture. The deposition temperature and H ₂ flow rate were fixed at 300 °C and 6 sccm, respectively. The crystalline quality was improved by increasing the RF power. The poly-Si deposited at an RF power of 1500 W with gas flow rates of [SiH ₂Cl ₂]=0.4 seem and [SiH ₄]=0.2 sccm showed a Raman polycrystalline volume fraction of 88 %, FWHM of 7 cm ^-1, and TEM grain size of ∼1200 Å.

Original language	English
Pages (from-to)	S1017-S1020
Journal	Journal of the Korean Physical Society
Volume	35
Issue number	SUPPL. 4
Publication status	Published - 1999

Cite this

@article{23642ef0a8df4368a97ddd7dd5019396,

title = "Polycrystalline silicon film deposited at 300 °C",

abstract = "Fabrication of polycrystalline silicon has been studied by inductively coupled plasma chemical vapor deposition (ICP-CVD) using a SiH 2 Cl 2/SiH 4/H 2 gas mixture. The deposition temperature and H 2 flow rate were fixed at 300 °C and 6 sccm, respectively. The crystalline quality was improved by increasing the RF power. The poly-Si deposited at an RF power of 1500 W with gas flow rates of [SiH 2Cl 2]=0.4 seem and [SiH 4]=0.2 sccm showed a Raman polycrystalline volume fraction of 88 \%, FWHM of 7 cm -1, and TEM grain size of ∼1200 {\AA}.",

author = "Yoon, \{Jae Hyoung\} and Lim, \{Sang Hyung\} and Moon, \{Byeong Yeon\} and Jin Jang",

year = "1999",

language = "English",

volume = "35",

pages = "S1017--S1020",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL. 4",

}

TY - JOUR

T1 - Polycrystalline silicon film deposited at 300 °C

AU - Yoon, Jae Hyoung

AU - Lim, Sang Hyung

AU - Moon, Byeong Yeon

AU - Jang, Jin

PY - 1999

Y1 - 1999

N2 - Fabrication of polycrystalline silicon has been studied by inductively coupled plasma chemical vapor deposition (ICP-CVD) using a SiH 2 Cl 2/SiH 4/H 2 gas mixture. The deposition temperature and H 2 flow rate were fixed at 300 °C and 6 sccm, respectively. The crystalline quality was improved by increasing the RF power. The poly-Si deposited at an RF power of 1500 W with gas flow rates of [SiH 2Cl 2]=0.4 seem and [SiH 4]=0.2 sccm showed a Raman polycrystalline volume fraction of 88 %, FWHM of 7 cm -1, and TEM grain size of ∼1200 Å.

AB - Fabrication of polycrystalline silicon has been studied by inductively coupled plasma chemical vapor deposition (ICP-CVD) using a SiH 2 Cl 2/SiH 4/H 2 gas mixture. The deposition temperature and H 2 flow rate were fixed at 300 °C and 6 sccm, respectively. The crystalline quality was improved by increasing the RF power. The poly-Si deposited at an RF power of 1500 W with gas flow rates of [SiH 2Cl 2]=0.4 seem and [SiH 4]=0.2 sccm showed a Raman polycrystalline volume fraction of 88 %, FWHM of 7 cm -1, and TEM grain size of ∼1200 Å.

UR - https://www.scopus.com/pages/publications/0033262566

M3 - Article

AN - SCOPUS:0033262566

SN - 0374-4884

VL - 35

SP - S1017-S1020

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 4

ER -

Polycrystalline silicon film deposited at 300 °C

Abstract

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