Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical vapor deposition using SiF 4/H2

Jae Ik Woo; Hong Joo Lim; Jin Jang

doi:10.1063/1.112937

Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical vapor deposition using SiF ₄/H₂

Jae Ik Woo
, Hong Joo Lim
, Jin Jang

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Polycrystalline silicon was deposited on Corning 7059 glass by remote plasma chemical vapor deposition using SiF₂/H₂. Raman spectroscopy indicated a crystalline fraction of 85% in films deposited at a substrate temperature of 350°C. Thin film transistors made of this material exhibited a field effect mobility of 7.5 cm²/V s and a threshold voltage of 6.1 V.

Original language	English
Pages (from-to)	1644-1646
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	13
DOIs	https://doi.org/10.1063/1.112937
Publication status	Published - 1994

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10.1063/1.112937

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@article{6267a940c3ff48e7a0e7c7e23afb5452,

title = "Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical vapor deposition using SiF 4/H2",

abstract = "Polycrystalline silicon was deposited on Corning 7059 glass by remote plasma chemical vapor deposition using SiF2/H2. Raman spectroscopy indicated a crystalline fraction of 85\% in films deposited at a substrate temperature of 350°C. Thin film transistors made of this material exhibited a field effect mobility of 7.5 cm2/V s and a threshold voltage of 6.1 V.",

author = "Woo, \{Jae Ik\} and Lim, \{Hong Joo\} and Jin Jang",

year = "1994",

doi = "10.1063/1.112937",

language = "English",

volume = "65",

pages = "1644--1646",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

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TY - JOUR

T1 - Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical vapor deposition using SiF 4/H2

AU - Woo, Jae Ik

AU - Lim, Hong Joo

AU - Jang, Jin

PY - 1994

Y1 - 1994

N2 - Polycrystalline silicon was deposited on Corning 7059 glass by remote plasma chemical vapor deposition using SiF2/H2. Raman spectroscopy indicated a crystalline fraction of 85% in films deposited at a substrate temperature of 350°C. Thin film transistors made of this material exhibited a field effect mobility of 7.5 cm2/V s and a threshold voltage of 6.1 V.

AB - Polycrystalline silicon was deposited on Corning 7059 glass by remote plasma chemical vapor deposition using SiF2/H2. Raman spectroscopy indicated a crystalline fraction of 85% in films deposited at a substrate temperature of 350°C. Thin film transistors made of this material exhibited a field effect mobility of 7.5 cm2/V s and a threshold voltage of 6.1 V.

UR - https://www.scopus.com/pages/publications/0000493060

U2 - 10.1063/1.112937

DO - 10.1063/1.112937

M3 - Article

AN - SCOPUS:0000493060

SN - 0003-6951

VL - 65

SP - 1644

EP - 1646

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical vapor deposition using SiF ₄/H₂

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