Post-annealing and passivations of transparent bottom gate IGZO thin film transistors

Doo Hee Cho; Shinhyuk Yang; Jaeheon Shin; Min Ki Ryu; Woo Seok Cheong; Chunwon Byun; Sung Min Yoon; Sang Hee Ko Park; Jeong Ik Lee; Chi Sun Hwang; Hye Yong Chu

doi:10.1889/1.3069362

Post-annealing and passivations of transparent bottom gate IGZO thin film transistors

Doo Hee Cho
, Shinhyuk Yang
, Jaeheon Shin
, Min Ki Ryu
, Woo Seok Cheong
, Chunwon Byun
, Sung Min Yoon
, Sang Hee Ko Park
, Jeong Ik Lee
, Chi Sun Hwang
, Hye Yong Chu

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 cm²/Vs and the sub-threshold swing down to 0.2 V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. Ga₂O₃, Al₂O₃, SiO₂ and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations.

Original language	English
Pages (from-to)	1243-1246
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	39
Issue number	3
DOIs	https://doi.org/10.1889/1.3069362
Publication status	Published - 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: 20 May 2008 → 21 May 2008

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title = "Post-annealing and passivations of transparent bottom gate IGZO thin film transistors",

abstract = "We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 cm2/Vs and the sub-threshold swing down to 0.2 V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. Ga2O3, Al2O3, SiO2 and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations.",

author = "Cho, \{Doo Hee\} and Shinhyuk Yang and Jaeheon Shin and Ryu, \{Min Ki\} and Cheong, \{Woo Seok\} and Chunwon Byun and Yoon, \{Sung Min\} and Park, \{Sang Hee Ko\} and Lee, \{Jeong Ik\} and Hwang, \{Chi Sun\} and Chu, \{Hye Yong\}",

year = "2008",

doi = "10.1889/1.3069362",

language = "English",

volume = "39",

pages = "1243--1246",

journal = "Digest of Technical Papers - SID International Symposium",

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publisher = "John Wiley and Sons Inc.",

number = "3",

note = "2008 SID International Symposium ; Conference date: 20-05-2008 Through 21-05-2008",

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TY - JOUR

T1 - Post-annealing and passivations of transparent bottom gate IGZO thin film transistors

AU - Cho, Doo Hee

AU - Yang, Shinhyuk

AU - Shin, Jaeheon

AU - Ryu, Min Ki

AU - Cheong, Woo Seok

AU - Byun, Chunwon

AU - Yoon, Sung Min

AU - Park, Sang Hee Ko

AU - Lee, Jeong Ik

AU - Hwang, Chi Sun

AU - Chu, Hye Yong

PY - 2008

Y1 - 2008

N2 - We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 cm2/Vs and the sub-threshold swing down to 0.2 V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. Ga2O3, Al2O3, SiO2 and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations.

AB - We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 cm2/Vs and the sub-threshold swing down to 0.2 V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. Ga2O3, Al2O3, SiO2 and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations.

UR - https://www.scopus.com/pages/publications/54549092500

U2 - 10.1889/1.3069362

DO - 10.1889/1.3069362

M3 - Conference article

AN - SCOPUS:54549092500

SN - 0097-966X

VL - 39

SP - 1243

EP - 1246

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 3

T2 - 2008 SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

Post-annealing and passivations of transparent bottom gate IGZO thin film transistors

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