Power-law dependence of persistent photoconductivity on exposure time in compensated a-Si: H

Suk Ho Choi

doi:10.1016/0038-1098(93)90145-D

Power-law dependence of persistent photoconductivity on exposure time in compensated a-Si: H

Suk Ho Choi

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The exposure time dependence of the persistent photoconductivity (PPC) in compensated films of hydrogenated amorphous silicon (a-Si : H) has been investigated as a function of illumination temperature. It is found that the conductivity in the PPC state follows a power-law dependence on the exposure time when the Fermi level of the sample lies in the conduction band tails. The power-law exponent is inversely proportional to the illumination temperature, which is well predicted by a simple theory based on Staebler-Wronski defect creation. These results are compared with the predictions of the thermal-equilibration model.

Original language	English
Pages (from-to)	589-592
Number of pages	4
Journal	Solid State Communications
Volume	86
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(93)90145-D
Publication status	Published - Jun 1993

Bibliographical note

Funding Information:
Acknowledgements --I would like to thank Dr Kyung-Sook Hyun and Prof. Choochon Lee of the Korea Institute of Science and Technology for providing the compensated samples used in this study. This research was partially supported by the Kyung Hee Univ. and by the Korea Science and Engineering Foundation through the Science Research Center of Excellence Program.

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10.1016/0038-1098(93)90145-D

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title = "Power-law dependence of persistent photoconductivity on exposure time in compensated a-Si: H",

abstract = "The exposure time dependence of the persistent photoconductivity (PPC) in compensated films of hydrogenated amorphous silicon (a-Si : H) has been investigated as a function of illumination temperature. It is found that the conductivity in the PPC state follows a power-law dependence on the exposure time when the Fermi level of the sample lies in the conduction band tails. The power-law exponent is inversely proportional to the illumination temperature, which is well predicted by a simple theory based on Staebler-Wronski defect creation. These results are compared with the predictions of the thermal-equilibration model.",

author = "Choi, \{Suk Ho\}",

note = "Funding Information: Acknowledgements --I would like to thank Dr Kyung-Sook Hyun and Prof. Choochon Lee of the Korea Institute of Science and Technology for providing the compensated samples used in this study. This research was partially supported by the Kyung Hee Univ. and by the Korea Science and Engineering Foundation through the Science Research Center of Excellence Program.",

year = "1993",

month = jun,

doi = "10.1016/0038-1098(93)90145-D",

language = "English",

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T1 - Power-law dependence of persistent photoconductivity on exposure time in compensated a-Si

T2 - H

AU - Choi, Suk Ho

N1 - Funding Information: Acknowledgements --I would like to thank Dr Kyung-Sook Hyun and Prof. Choochon Lee of the Korea Institute of Science and Technology for providing the compensated samples used in this study. This research was partially supported by the Kyung Hee Univ. and by the Korea Science and Engineering Foundation through the Science Research Center of Excellence Program.

PY - 1993/6

Y1 - 1993/6

N2 - The exposure time dependence of the persistent photoconductivity (PPC) in compensated films of hydrogenated amorphous silicon (a-Si : H) has been investigated as a function of illumination temperature. It is found that the conductivity in the PPC state follows a power-law dependence on the exposure time when the Fermi level of the sample lies in the conduction band tails. The power-law exponent is inversely proportional to the illumination temperature, which is well predicted by a simple theory based on Staebler-Wronski defect creation. These results are compared with the predictions of the thermal-equilibration model.

AB - The exposure time dependence of the persistent photoconductivity (PPC) in compensated films of hydrogenated amorphous silicon (a-Si : H) has been investigated as a function of illumination temperature. It is found that the conductivity in the PPC state follows a power-law dependence on the exposure time when the Fermi level of the sample lies in the conduction band tails. The power-law exponent is inversely proportional to the illumination temperature, which is well predicted by a simple theory based on Staebler-Wronski defect creation. These results are compared with the predictions of the thermal-equilibration model.

UR - https://www.scopus.com/pages/publications/0027610776

U2 - 10.1016/0038-1098(93)90145-D

DO - 10.1016/0038-1098(93)90145-D

M3 - Article

AN - SCOPUS:0027610776

SN - 0038-1098

VL - 86

SP - 589

EP - 592

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Power-law dependence of persistent photoconductivity on exposure time in compensated a-Si: H

Abstract

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