Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

K. H. Shim; M. C. Paek; B. T. Lee; C. Kim; J. Y. Kang

doi:10.1007/s003390100787

Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

K. H. Shim, M. C. Paek, B. T. Lee, C. Kim, J. Y. Kang

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Effects of thermal treatments on the electrical properties and microstructures of indium-tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800°C revealed Schottky contact characteristics with a barrier height corresponding to ITO's work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In₂O₃ (222)//GaN (0001) with an ideal metal-semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In₂O₃ at high temperature.

Original language	English
Pages (from-to)	471-474
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	72
Issue number	4
DOIs	https://doi.org/10.1007/s003390100787
Publication status	Published - 2001

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title = "Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter",

abstract = "Effects of thermal treatments on the electrical properties and microstructures of indium-tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800°C revealed Schottky contact characteristics with a barrier height corresponding to ITO's work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In2O3 (222)//GaN (0001) with an ideal metal-semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In2O3 at high temperature.",

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AU - Shim, K. H.

AU - Paek, M. C.

AU - Lee, B. T.

AU - Kim, C.

AU - Kang, J. Y.

PY - 2001

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N2 - Effects of thermal treatments on the electrical properties and microstructures of indium-tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800°C revealed Schottky contact characteristics with a barrier height corresponding to ITO's work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In2O3 (222)//GaN (0001) with an ideal metal-semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In2O3 at high temperature.

AB - Effects of thermal treatments on the electrical properties and microstructures of indium-tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800°C revealed Schottky contact characteristics with a barrier height corresponding to ITO's work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In2O3 (222)//GaN (0001) with an ideal metal-semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In2O3 at high temperature.

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Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

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