Properties of one-free standing CNT cold cathode for high resolution devices

Ha Rim Lee; Kyu Chang Park

doi:10.1109/IVNC.2018.8520145

Properties of one-free standing CNT cold cathode for high resolution devices

Ha Rim Lee
, Kyu Chang Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A high resolution imaging technology has been developed with cold cathode electron source. Just grown carbon nanotube (CNT) field emitter was prepared for electron microscope. The angular current density, virtual source and lifetime of the emitted electrons were evaluated with three different categorized. An estimated beam brightness was extracted from the experimental value. With the geometric field enhancement factor, reduced brightness (B_r) is depend on and enhanced brightness with higher geometric factors. The reduced brightness of 1.42 x 10¹¹, A. m^-2 sr^-1 V^-1, at 1,100V of applied voltage obtained.

Original language	English
Title of host publication	2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538657171
DOIs	https://doi.org/10.1109/IVNC.2018.8520145
Publication status	Published - 1 Nov 2018
Event	31st International Vacuum Nanoelectronics Conference, IVNC 2018 - Kyoto, Japan Duration: 9 Jul 2018 → 13 Jul 2018

Publication series

Name	2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018

Conference

Conference	31st International Vacuum Nanoelectronics Conference, IVNC 2018
Country/Territory	Japan
City	Kyoto
Period	9/07/18 → 13/07/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

CNT cold cathode
Eletron miscropsopy
High brightness

Access to Document

10.1109/IVNC.2018.8520145

Cite this

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title = "Properties of one-free standing CNT cold cathode for high resolution devices",

abstract = "A high resolution imaging technology has been developed with cold cathode electron source. Just grown carbon nanotube (CNT) field emitter was prepared for electron microscope. The angular current density, virtual source and lifetime of the emitted electrons were evaluated with three different categorized. An estimated beam brightness was extracted from the experimental value. With the geometric field enhancement factor, reduced brightness (Br) is depend on and enhanced brightness with higher geometric factors. The reduced brightness of 1.42 x 1011, A. m-2 sr-1 V-1, at 1,100V of applied voltage obtained.",

keywords = "CNT cold cathode, Eletron miscropsopy, High brightness",

author = "Lee, \{Ha Rim\} and Park, \{Kyu Chang\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 31st International Vacuum Nanoelectronics Conference, IVNC 2018 ; Conference date: 09-07-2018 Through 13-07-2018",

year = "2018",

month = nov,

day = "1",

doi = "10.1109/IVNC.2018.8520145",

language = "English",

series = "2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018",

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}

Lee, HR & Park, KC 2018, Properties of one-free standing CNT cold cathode for high resolution devices. in 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018., 8520145, 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018, Institute of Electrical and Electronics Engineers Inc., 31st International Vacuum Nanoelectronics Conference, IVNC 2018, Kyoto, Japan, 9/07/18. https://doi.org/10.1109/IVNC.2018.8520145

Properties of one-free standing CNT cold cathode for high resolution devices. / Lee, Ha Rim; Park, Kyu Chang.
2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8520145 (2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Properties of one-free standing CNT cold cathode for high resolution devices

AU - Lee, Ha Rim

AU - Park, Kyu Chang

PY - 2018/11/1

Y1 - 2018/11/1

N2 - A high resolution imaging technology has been developed with cold cathode electron source. Just grown carbon nanotube (CNT) field emitter was prepared for electron microscope. The angular current density, virtual source and lifetime of the emitted electrons were evaluated with three different categorized. An estimated beam brightness was extracted from the experimental value. With the geometric field enhancement factor, reduced brightness (Br) is depend on and enhanced brightness with higher geometric factors. The reduced brightness of 1.42 x 1011, A. m-2 sr-1 V-1, at 1,100V of applied voltage obtained.

AB - A high resolution imaging technology has been developed with cold cathode electron source. Just grown carbon nanotube (CNT) field emitter was prepared for electron microscope. The angular current density, virtual source and lifetime of the emitted electrons were evaluated with three different categorized. An estimated beam brightness was extracted from the experimental value. With the geometric field enhancement factor, reduced brightness (Br) is depend on and enhanced brightness with higher geometric factors. The reduced brightness of 1.42 x 1011, A. m-2 sr-1 V-1, at 1,100V of applied voltage obtained.

KW - CNT cold cathode

KW - Eletron miscropsopy

KW - High brightness

UR - https://www.scopus.com/pages/publications/85057508439

U2 - 10.1109/IVNC.2018.8520145

DO - 10.1109/IVNC.2018.8520145

M3 - Conference contribution

AN - SCOPUS:85057508439

T3 - 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018

BT - 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 31st International Vacuum Nanoelectronics Conference, IVNC 2018

Y2 - 9 July 2018 through 13 July 2018

ER -

Properties of one-free standing CNT cold cathode for high resolution devices

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

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