Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO2 Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C

Se Na Choi; So Yeong Na; Sung Min Yoon

doi:10.23919/AM-FPD.2019.8830595

Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO₂ Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C

Se Na Choi
, So Yeong Na
, Sung Min Yoon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The device characteristics and reliability of the In-Ga-Zn-O (IGZO) TFTs employing the HfO₂ gate insulator prepared by atomic-layer deposition (ALD) at a temperature as low as 150°C were investigated. The leakage current density and the dielectric constant for this HfO₂ thin film were obtained to be 3.8×10^-7 A/cm² and 22, respectively. The IGZO TFT showed a saturation mobility of 6.8 cm²/Vs and a subthreshold swing of 0.26 V/dec. Under the positive bias stress condition, the threshold voltage shift was evaluated to be less than -0.19 V.

Original language	English
Title of host publication	AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784990875374
DOIs	https://doi.org/10.23919/AM-FPD.2019.8830595
Publication status	Published - Jul 2019
Event	26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 - Kyoto, Japan Duration: 2 Jul 2019 → 5 Jul 2019

Publication series

Name	AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference	26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
Country/Territory	Japan
City	Kyoto
Period	2/07/19 → 5/07/19

Bibliographical note

Publisher Copyright:
© 2019 FTFMD.

Access to Document

10.23919/AM-FPD.2019.8830595

Cite this

Choi, S. N., Na, S. Y., & Yoon, S. M. (2019). Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO₂ Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings Article 8830595 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2019.8830595

Choi, Se Na ; Na, So Yeong ; Yoon, Sung Min. / Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO₂ Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C. AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

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title = "Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO2 Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C",

abstract = "The device characteristics and reliability of the In-Ga-Zn-O (IGZO) TFTs employing the HfO2 gate insulator prepared by atomic-layer deposition (ALD) at a temperature as low as 150°C were investigated. The leakage current density and the dielectric constant for this HfO2 thin film were obtained to be 3.8×10-7 A/cm2 and 22, respectively. The IGZO TFT showed a saturation mobility of 6.8 cm2/Vs and a subthreshold swing of 0.26 V/dec. Under the positive bias stress condition, the threshold voltage shift was evaluated to be less than -0.19 V.",

author = "Choi, \{Se Na\} and Na, \{So Yeong\} and Yoon, \{Sung Min\}",

note = "Publisher Copyright: {\textcopyright} 2019 FTFMD.; 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 ; Conference date: 02-07-2019 Through 05-07-2019",

year = "2019",

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doi = "10.23919/AM-FPD.2019.8830595",

language = "English",

series = "AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Choi, SN, Na, SY & Yoon, SM 2019, Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO₂ Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C. in AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8830595, AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019, Kyoto, Japan, 2/07/19. https://doi.org/10.23919/AM-FPD.2019.8830595

Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO₂ Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C. / Choi, Se Na; Na, So Yeong; Yoon, Sung Min.
AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8830595 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yoon, Sung Min

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N2 - The device characteristics and reliability of the In-Ga-Zn-O (IGZO) TFTs employing the HfO2 gate insulator prepared by atomic-layer deposition (ALD) at a temperature as low as 150°C were investigated. The leakage current density and the dielectric constant for this HfO2 thin film were obtained to be 3.8×10-7 A/cm2 and 22, respectively. The IGZO TFT showed a saturation mobility of 6.8 cm2/Vs and a subthreshold swing of 0.26 V/dec. Under the positive bias stress condition, the threshold voltage shift was evaluated to be less than -0.19 V.

AB - The device characteristics and reliability of the In-Ga-Zn-O (IGZO) TFTs employing the HfO2 gate insulator prepared by atomic-layer deposition (ALD) at a temperature as low as 150°C were investigated. The leakage current density and the dielectric constant for this HfO2 thin film were obtained to be 3.8×10-7 A/cm2 and 22, respectively. The IGZO TFT showed a saturation mobility of 6.8 cm2/Vs and a subthreshold swing of 0.26 V/dec. Under the positive bias stress condition, the threshold voltage shift was evaluated to be less than -0.19 V.

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BT - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices

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Choi SN, Na SY, Yoon SM. Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO₂ Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8830595. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). doi: 10.23919/AM-FPD.2019.8830595