Protrusions of super grains formed by ultrashort Xe flash-lamp annealing of amorphous silicon and its effect on the performances of thin-film transistors

Saurabh Saxena; Jin Jang

doi:10.1109/TED.2011.2157827

Protrusions of super grains formed by ultrashort Xe flash-lamp annealing of amorphous silicon and its effect on the performances of thin-film transistors

Saurabh Saxena
, Jin Jang

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We studied the formation of super grains and protrusions at the grain boundaries by the ultrashort Xe flash-lamp annealing of amorphous silicon. Huge protrusions at the grain boundary originate from the collision of nearby super grains with an average grain diameter of 40 μm , and small protrusions at the grain boundary are also observed. The crystallization starts from the seeds located at the center of the grains by releasing heat toward the surrounding Si. The formation of grain boundaries is related to lateral grain growth and pushing liquid silicon toward the direction of grain growth and the collisions between them. Thin-film transistors (TFTs) with various grain boundaries in the channel were investigated, and the p-channel poly-Si TFTs with two and four grain boundaries exhibited the maximum field-effect mobility of 112 and 75 cm²/V·s, respectively.

Original language	English
Article number	5941000
Pages (from-to)	2638-2643
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	8
DOIs	https://doi.org/10.1109/TED.2011.2157827
Publication status	Published - Aug 2011

Bibliographical note

Funding Information:
Manuscript received January 4, 2011; revised February 23, 2011, April 12, 2011, April 25, 2011 and May 10, 2011; accepted May 12, 2011. Date of current version July 22, 2011. This work was supported by the Information Display R&D Center, which is one of the Knowledge Economy Frontier R&D Program funded by the Ministry of Knowledge Economy of the Korean government under Grant F0004042-2010-33. The review of this paper was arranged by Editor H.-S. Tae.

Keywords

Flash-lamp annealing (FLA)
low-temperature polycrystalline silicon (poly-Si)
subgrain boundaries
super grain
thin-film transistors (TFTs)

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10.1109/TED.2011.2157827

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title = "Protrusions of super grains formed by ultrashort Xe flash-lamp annealing of amorphous silicon and its effect on the performances of thin-film transistors",

abstract = "We studied the formation of super grains and protrusions at the grain boundaries by the ultrashort Xe flash-lamp annealing of amorphous silicon. Huge protrusions at the grain boundary originate from the collision of nearby super grains with an average grain diameter of 40 μm , and small protrusions at the grain boundary are also observed. The crystallization starts from the seeds located at the center of the grains by releasing heat toward the surrounding Si. The formation of grain boundaries is related to lateral grain growth and pushing liquid silicon toward the direction of grain growth and the collisions between them. Thin-film transistors (TFTs) with various grain boundaries in the channel were investigated, and the p-channel poly-Si TFTs with two and four grain boundaries exhibited the maximum field-effect mobility of 112 and 75 cm2/V·s, respectively.",

keywords = "Flash-lamp annealing (FLA), low-temperature polycrystalline silicon (poly-Si), subgrain boundaries, super grain, thin-film transistors (TFTs)",

author = "Saurabh Saxena and Jin Jang",

note = "Funding Information: Manuscript received January 4, 2011; revised February 23, 2011, April 12, 2011, April 25, 2011 and May 10, 2011; accepted May 12, 2011. Date of current version July 22, 2011. This work was supported by the Information Display R\&D Center, which is one of the Knowledge Economy Frontier R\&D Program funded by the Ministry of Knowledge Economy of the Korean government under Grant F0004042-2010-33. The review of this paper was arranged by Editor H.-S. Tae.",

year = "2011",

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doi = "10.1109/TED.2011.2157827",

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AU - Jang, Jin

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AB - We studied the formation of super grains and protrusions at the grain boundaries by the ultrashort Xe flash-lamp annealing of amorphous silicon. Huge protrusions at the grain boundary originate from the collision of nearby super grains with an average grain diameter of 40 μm , and small protrusions at the grain boundary are also observed. The crystallization starts from the seeds located at the center of the grains by releasing heat toward the surrounding Si. The formation of grain boundaries is related to lateral grain growth and pushing liquid silicon toward the direction of grain growth and the collisions between them. Thin-film transistors (TFTs) with various grain boundaries in the channel were investigated, and the p-channel poly-Si TFTs with two and four grain boundaries exhibited the maximum field-effect mobility of 112 and 75 cm2/V·s, respectively.

KW - Flash-lamp annealing (FLA)

KW - low-temperature polycrystalline silicon (poly-Si)

KW - subgrain boundaries

KW - super grain

KW - thin-film transistors (TFTs)

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JF - IEEE Transactions on Electron Devices

IS - 8

M1 - 5941000

ER -

Protrusions of super grains formed by ultrashort Xe flash-lamp annealing of amorphous silicon and its effect on the performances of thin-film transistors

Abstract

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Keywords

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