Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure

Ha Rim Lee; Jung Soo Kang; Min Tae Chung; Kyu Chang Park

doi:10.1109/IVNC.2016.7551531

Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure

Ha Rim Lee, Jung Soo Kang, Min Tae Chung, Kyu Chang Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We developed the novel pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure technique. CNT emitters grown by resist-assisted patterning process is used for the source of electron beam to crystallize an amorphous Si (a-Si:H) thin films. The high electron energy form CNT emitters is enough to change phase to pseudo crystalline due to the network vibration of silicon atoms. The grain size distribution of Si thin films about 10∼20 nm. However, a cross section of HR-TEM image shows fully crystallized without grain boundaries.

Original language	English
Title of host publication	2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509024193
DOIs	https://doi.org/10.1109/IVNC.2016.7551531
Publication status	Published - 24 Aug 2016
Event	29th International Vacuum Nanoelectronics Conference, IVNC 2016 - Vancouver, Canada Duration: 11 Jul 2016 → 15 Jul 2016

Publication series

Name	2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016

Conference

Conference	29th International Vacuum Nanoelectronics Conference, IVNC 2016
Country/Territory	Canada
City	Vancouver
Period	11/07/16 → 15/07/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

Carbon nanotube
crystallization
field emission

Access to Document

10.1109/IVNC.2016.7551531

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Lee, H. R., Kang, J. S., Chung, M. T., & Park, K. C. (2016). Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure. In 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016 Article 7551531 (2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2016.7551531

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title = "Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure",

abstract = "We developed the novel pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure technique. CNT emitters grown by resist-assisted patterning process is used for the source of electron beam to crystallize an amorphous Si (a-Si:H) thin films. The high electron energy form CNT emitters is enough to change phase to pseudo crystalline due to the network vibration of silicon atoms. The grain size distribution of Si thin films about 10∼20 nm. However, a cross section of HR-TEM image shows fully crystallized without grain boundaries.",

keywords = "Carbon nanotube, crystallization, field emission",

author = "Lee, {Ha Rim} and Kang, {Jung Soo} and Chung, {Min Tae} and Park, {Kyu Chang}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th International Vacuum Nanoelectronics Conference, IVNC 2016 ; Conference date: 11-07-2016 Through 15-07-2016",

year = "2016",

month = aug,

day = "24",

doi = "10.1109/IVNC.2016.7551531",

language = "English",

series = "2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Lee, HR, Kang, JS, Chung, MT & Park, KC 2016, Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure. in 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016., 7551531, 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016, Institute of Electrical and Electronics Engineers Inc., 29th International Vacuum Nanoelectronics Conference, IVNC 2016, Vancouver, Canada, 11/07/16. https://doi.org/10.1109/IVNC.2016.7551531

Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure. / Lee, Ha Rim; Kang, Jung Soo; Chung, Min Tae et al.
2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7551531 (2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure

AU - Lee, Ha Rim

AU - Kang, Jung Soo

AU - Chung, Min Tae

AU - Park, Kyu Chang

PY - 2016/8/24

Y1 - 2016/8/24

N2 - We developed the novel pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure technique. CNT emitters grown by resist-assisted patterning process is used for the source of electron beam to crystallize an amorphous Si (a-Si:H) thin films. The high electron energy form CNT emitters is enough to change phase to pseudo crystalline due to the network vibration of silicon atoms. The grain size distribution of Si thin films about 10∼20 nm. However, a cross section of HR-TEM image shows fully crystallized without grain boundaries.

AB - We developed the novel pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure technique. CNT emitters grown by resist-assisted patterning process is used for the source of electron beam to crystallize an amorphous Si (a-Si:H) thin films. The high electron energy form CNT emitters is enough to change phase to pseudo crystalline due to the network vibration of silicon atoms. The grain size distribution of Si thin films about 10∼20 nm. However, a cross section of HR-TEM image shows fully crystallized without grain boundaries.

KW - Carbon nanotube

KW - crystallization

KW - field emission

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U2 - 10.1109/IVNC.2016.7551531

DO - 10.1109/IVNC.2016.7551531

M3 - Conference contribution

AN - SCOPUS:84988432233

T3 - 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016

BT - 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 29th International Vacuum Nanoelectronics Conference, IVNC 2016

Y2 - 11 July 2016 through 15 July 2016

ER -

Lee HR, Kang JS, Chung MT, Park KC. Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure. In 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7551531. (2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016). doi: 10.1109/IVNC.2016.7551531

Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure

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