Abstract
We introduced the novel pseudo-crystalline silicon diode fabrication technique with carbon nanotube electron beam (C-beam) irradiation. Compared to the amorphous p-i-n device, the diode characteristics enhanced by C-beam showed enhanced on/off ratio with higher on current. The diode performance will be building block for various devices applications.
Original language | English |
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Title of host publication | 22nd International Display Workshops, IDW 2015 |
Publisher | International Display Workshops |
Pages | 1576-1578 |
Number of pages | 3 |
ISBN (Electronic) | 9781510845503 |
Publication status | Published - 2015 |
Event | 22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 9 Dec 2015 → 11 Dec 2015 |
Publication series
Name | Proceedings of the International Display Workshops |
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Volume | 3 |
ISSN (Print) | 1883-2490 |
Conference
Conference | 22nd International Display Workshops, IDW 2015 |
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Country/Territory | Japan |
City | Otsu |
Period | 9/12/15 → 11/12/15 |
Bibliographical note
Publisher Copyright:© 2015 Proceedings of the International Display Workshops. All rights reserved.
Keywords
- C-beam
- CNT emitters
- Field emission
- Pseudo-crystal