Quantum-dot light emitting diodes with charge generation layers

Hyo Min Kim; Jeong Gi Kim; Ji Eun Lee; Jin Jang

doi:10.1002/sdtp.10464

Quantum-dot light emitting diodes with charge generation layers

Hyo Min Kim
, Jeong Gi Kim
, Ji Eun Lee
, Jin Jang

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report the solution processed charge generation layers (CGLs) used for inverted quantum-dot light emitting diodes (QLEDs). The inverted green, yellow and red QLEDs with solution processed CGLs exhibit the maximum current efficiency (CE_max) of 19.2, 13.6 and 6.1 cd/A, respectively. Therefore, solution processed CGL can be used for low cost QLEDs with high efficiency.

Original language	English
Pages (from-to)	278-281
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	46
Issue number	Book 1
DOIs	https://doi.org/10.1002/sdtp.10464
Publication status	Published - 1 Jun 2015
Event	2015 SID International Symposium - San Jose, United States Duration: 2 Jun 2015 → 3 Jun 2015

Bibliographical note

Publisher Copyright:
© 2015 SID.

Keywords

CGL
Charge generation layer
Inverted structure
QLED
Quantum-dot
Solution process

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10.1002/sdtp.10464

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title = "Quantum-dot light emitting diodes with charge generation layers",

abstract = "We report the solution processed charge generation layers (CGLs) used for inverted quantum-dot light emitting diodes (QLEDs). The inverted green, yellow and red QLEDs with solution processed CGLs exhibit the maximum current efficiency (CEmax) of 19.2, 13.6 and 6.1 cd/A, respectively. Therefore, solution processed CGL can be used for low cost QLEDs with high efficiency.",

keywords = "CGL, Charge generation layer, Inverted structure, QLED, Quantum-dot, Solution process",

author = "Kim, \{Hyo Min\} and Kim, \{Jeong Gi\} and Lee, \{Ji Eun\} and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 2015 SID.; 2015 SID International Symposium ; Conference date: 02-06-2015 Through 03-06-2015",

year = "2015",

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doi = "10.1002/sdtp.10464",

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TY - JOUR

T1 - Quantum-dot light emitting diodes with charge generation layers

AU - Kim, Hyo Min

AU - Kim, Jeong Gi

AU - Lee, Ji Eun

AU - Jang, Jin

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We report the solution processed charge generation layers (CGLs) used for inverted quantum-dot light emitting diodes (QLEDs). The inverted green, yellow and red QLEDs with solution processed CGLs exhibit the maximum current efficiency (CEmax) of 19.2, 13.6 and 6.1 cd/A, respectively. Therefore, solution processed CGL can be used for low cost QLEDs with high efficiency.

AB - We report the solution processed charge generation layers (CGLs) used for inverted quantum-dot light emitting diodes (QLEDs). The inverted green, yellow and red QLEDs with solution processed CGLs exhibit the maximum current efficiency (CEmax) of 19.2, 13.6 and 6.1 cd/A, respectively. Therefore, solution processed CGL can be used for low cost QLEDs with high efficiency.

KW - CGL

KW - Charge generation layer

KW - Inverted structure

KW - QLED

KW - Quantum-dot

KW - Solution process

UR - https://www.scopus.com/pages/publications/84963705818

U2 - 10.1002/sdtp.10464

DO - 10.1002/sdtp.10464

M3 - Conference article

AN - SCOPUS:84963705818

SN - 0097-966X

VL - 46

SP - 278

EP - 281

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - Book 1

T2 - 2015 SID International Symposium

Y2 - 2 June 2015 through 3 June 2015

ER -

Quantum-dot light emitting diodes with charge generation layers

Abstract

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Keywords

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