Abstract
Pressure induced hydrogenic donor impurity of ground and excited state in a GaAlAs/GaAs/GaAlAs corrugated quantum well is investigated. The calculations have been carried out using variational technique within the single band effective mass approximation taking into account the anisotropy and the corrections due to the conduction band nonparabolicity. The energy dependent effective mass and the position dependent quantity (Rashba spin-orbit splitting energy) are introduced to obtain the binding energy as a function of well width in the influence of pressure. The obtained results are compared with the other existing literature available.
| Original language | English |
|---|---|
| Pages (from-to) | 208-213 |
| Number of pages | 6 |
| Journal | Physics Letters, Section A: General, Atomic and Solid State Physics |
| Volume | 375 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Dec 2010 |
Bibliographical note
Funding Information:One of the authors (AJP) thanks the University Grants Commission, India , for the grant ( F No.38- 8/2009 (SR) ) supplied for the financial support of this work.
Keywords
- Binding energy
- Corrugated quantum well
- Pressure
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