Reduced efficiency roll-off in inverted quantum-dot light emitting diodes using metal oxide ETL

Eunsa Hwang; Hyo Min Kim; Jieun Lee; Jeonggi Kim; Jin Jang

Reduced efficiency roll-off in inverted quantum-dot light emitting diodes using metal oxide ETL

Eunsa Hwang
, Hyo Min Kim
, Jieun Lee
, Jeonggi Kim
, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This research reviews the reduced efficiency roll-off property of yellow-emitting quantum-dot light-emitting diodes (Y-QLEDs) using metal oxide electron transport layer (ETL). The efficiency roll-off is improved from 27% to 10% at 10,000 cd/m² with increasing the ETL thickness up to 120 nm.

Original language	English
Title of host publication	22nd International Display Workshops, IDW 2015
Publisher	International Display Workshops
Pages	901-902
Number of pages	2
ISBN (Electronic)	9781510845503
Publication status	Published - 2015
Event	22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 9 Dec 2015 → 11 Dec 2015

Publication series

Name	Proceedings of the International Display Workshops
Volume	2
ISSN (Print)	1883-2490

Conference

Conference	22nd International Display Workshops, IDW 2015
Country/Territory	Japan
City	Otsu
Period	9/12/15 → 11/12/15

Bibliographical note

Publisher Copyright:
© Proceedings of the International Display Workshops. All rights reserved.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Keywords

Inverted QLED
Metal oxide
Quantum-dot
Single ETL

Cite this

@inproceedings{45d8e34016324658bea236952cba44b0,

title = "Reduced efficiency roll-off in inverted quantum-dot light emitting diodes using metal oxide ETL",

abstract = "This research reviews the reduced efficiency roll-off property of yellow-emitting quantum-dot light-emitting diodes (Y-QLEDs) using metal oxide electron transport layer (ETL). The efficiency roll-off is improved from 27\% to 10\% at 10,000 cd/m2 with increasing the ETL thickness up to 120 nm.",

keywords = "Inverted QLED, Metal oxide, Quantum-dot, Single ETL",

author = "Eunsa Hwang and Kim, \{Hyo Min\} and Jieun Lee and Jeonggi Kim and Jin Jang",

note = "Publisher Copyright: {\textcopyright} Proceedings of the International Display Workshops. All rights reserved.; 22nd International Display Workshops, IDW 2015 ; Conference date: 09-12-2015 Through 11-12-2015",

year = "2015",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "901--902",

booktitle = "22nd International Display Workshops, IDW 2015",

}

Hwang, E, Kim, HM, Lee, J, Kim, J & Jang, J 2015, Reduced efficiency roll-off in inverted quantum-dot light emitting diodes using metal oxide ETL. in 22nd International Display Workshops, IDW 2015. Proceedings of the International Display Workshops, vol. 2, International Display Workshops, pp. 901-902, 22nd International Display Workshops, IDW 2015, Otsu, Japan, 9/12/15.

Reduced efficiency roll-off in inverted quantum-dot light emitting diodes using metal oxide ETL. / Hwang, Eunsa; Kim, Hyo Min; Lee, Jieun et al.
22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. p. 901-902 (Proceedings of the International Display Workshops; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Reduced efficiency roll-off in inverted quantum-dot light emitting diodes using metal oxide ETL

AU - Hwang, Eunsa

AU - Kim, Hyo Min

AU - Lee, Jieun

AU - Kim, Jeonggi

AU - Jang, Jin

PY - 2015

Y1 - 2015

N2 - This research reviews the reduced efficiency roll-off property of yellow-emitting quantum-dot light-emitting diodes (Y-QLEDs) using metal oxide electron transport layer (ETL). The efficiency roll-off is improved from 27% to 10% at 10,000 cd/m2 with increasing the ETL thickness up to 120 nm.

AB - This research reviews the reduced efficiency roll-off property of yellow-emitting quantum-dot light-emitting diodes (Y-QLEDs) using metal oxide electron transport layer (ETL). The efficiency roll-off is improved from 27% to 10% at 10,000 cd/m2 with increasing the ETL thickness up to 120 nm.

KW - Inverted QLED

KW - Metal oxide

KW - Quantum-dot

KW - Single ETL

UR - https://www.scopus.com/pages/publications/85056394267

M3 - Conference contribution

AN - SCOPUS:85056394267

T3 - Proceedings of the International Display Workshops

SP - 901

EP - 902

BT - 22nd International Display Workshops, IDW 2015

PB - International Display Workshops

T2 - 22nd International Display Workshops, IDW 2015

Y2 - 9 December 2015 through 11 December 2015

ER -

Reduced efficiency roll-off in inverted quantum-dot light emitting diodes using metal oxide ETL

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

Keywords

Other files and links

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Cite this