Abstract
The assembly of reduced graphene oxide (rGO) and fullerene (C60) into hybrid (rGO/C60) wires was successfully performed by employing the liquid-liquid interfacial precipitation method. The rGO sheets spontaneously wrapped C60 wires through the π-π interaction between rGO and C60. Structural characterization of the rGO/C60 wires was carried out by using UV/visible spectroscopy, scanning electron microscopy, and transmission electron microscopy. FET devices with rGO/C60 wires were fabricated to investigate their electrical properties. The I ds-Vg curves of the hybrid wires exhibited p-type semiconducting behavior both in vacuum and in air, indicating hole transport through rGO as a shell layer, whereas pure C60 wires and rGO sheets showed n-type and ambipolar behaviors, respectively, under vacuum. Possible application of the fabricated wires, such as photovoltaic devices, was also demonstrated.
Original language | English |
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Pages (from-to) | 8365-8371 |
Number of pages | 7 |
Journal | ACS Nano |
Volume | 5 |
Issue number | 10 |
DOIs | |
Publication status | Published - 25 Oct 2011 |
Keywords
- charge transfer
- field effect transistor
- fullerene wires
- photovoltaic device
- reduced graphene oxide