Abstract
We report a chloroform treatment method to reduce oxygen vacancies (Vo) and hydroxyl group (-OH) defects in oxide semiconductor thin film for short channel length thin-film transistor (TFT). This method is very simple and cost-effective. The reduction of Vo and -OH group defects after chloroform treatment is confirmed by XPS measurement. We fabricated short channel coplanar c-IGTO and amorphous InGaO (a-IGO) TFTs with/without chloroform treatment. The average VTH shifted from -9.9 V to -0.8 V and the average SS decreased from 0.39 to 0.33 Vdec-1 for the 0.8 μm c-IGTO TFTs. The positive bias temperature stress (PBTS) test results are excellent after treatment.
| Original language | English |
|---|---|
| Pages (from-to) | 1459-1462 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 56 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2025 |
| Event | International Symposium, Seminar, and Exhibition, Display Week 2025 - San Jose, United States Duration: 12 May 2025 → 16 May 2025 |
Bibliographical note
Publisher Copyright:© 2025 The Society for Information Display.
Keywords
- Short-channel TFT
- amorphous InGaO
- chloroform treatment
- coplanar oxide TFTs
- crystalline InGaSnO
- defects
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