Abstract
We deposited diamond-like-carbon (DLC) films of various hydrogen content by plasma enhanced chemical vapor deposition. The hydrogen content in the DLC film was controlled by a novel technique called a layer-by-layer deposition, in which the deposition of a thin layer of DLC and a CF4 plasma exposure on its surface were carried out alternatively. The DLC films with different hydrogen content could be obtained by varying the CF4 plasma exposure time. The emission current increases and turn-on field decreases with decreasing hydrogen content in the DLC film.
Original language | English |
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Pages | 268-272 |
Number of pages | 5 |
Publication status | Published - 1996 |
Event | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 7 Jul 1996 → 12 Jul 1996 |
Conference
Conference | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC |
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City | St.Petersburg, Russia |
Period | 7/07/96 → 12/07/96 |