Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2

E. Cartier; F. R. McFeely; V. Narayanan; P. Jamison; B. P. Linder; M. Copel; V. K. Paruchuri; V. S. Basker; R. Haight; D. Lim; R. Carruthers; T. Shaw; M. Steen; J. Sleight; J. Rubino; H. Deligianni; S. Guha; R. Jammy; G. Shahidi

doi:10.1109/.2005.1469279

Role of oxygen vacancies in V_FB/V_t stability of pFET metals on HfO₂

E. Cartier, F. R. McFeely, V. Narayanan, P. Jamison, B. P. Linder, M. Copel, V. K. Paruchuri, V. S. Basker, R. Haight, D. Lim, R. Carruthers, T. Shaw, M. Steen, J. Sleight, J. Rubino, H. Deligianni, S. Guha, R. Jammy, G. Shahidi

Research output: Contribution to journal › Conference article › peer-review

156 Citations (Scopus)

Abstract

We demonstrate experimentally that the flatband/threshold voltages (V _fb/V,) of pFET metal gates are strongly dependent on the post-deposition annealing conditions of the gate stacks. By varying the temperature and the O₂ partial pressure during post-deposition N ₂/O₂ and/or forming gas annealing (FGA) with Re, Ru and Pt, the gate stack V_fb, can change by as much as 750 mV. However, using Re as an example, it is shown that conditions can be optimized and V _fb/V_t-tuning for pFETs can be achieved for aggressively scaled stacks. It is proposed that charge transfer from oxygen vacancies to the gate electrode, possible only for high workfunction metal gates, leads to the formation of a dipole layer near the gate which can shift V_fb. The results indicate that V_fb/V_t control remains a formidable processing challenge with high workfunction metals on HfO₂.

Original language	English
Article number	1469279
Pages (from-to)	230-231
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2005
DOIs	https://doi.org/10.1109/.2005.1469279
Publication status	Published - 2005
Event	2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 14 Jun 2005 → 14 Jun 2005

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Cartier, E., McFeely, F. R., Narayanan, V., Jamison, P., Linder, B. P., Copel, M., Paruchuri, V. K., Basker, V. S., Haight, R., Lim, D., Carruthers, R., Shaw, T., Steen, M., Sleight, J., Rubino, J., Deligianni, H., Guha, S., Jammy, R., & Shahidi, G. (2005). Role of oxygen vacancies in V_FB/V_t stability of pFET metals on HfO₂. Digest of Technical Papers - Symposium on VLSI Technology, 2005, 230-231. Article 1469279. https://doi.org/10.1109/.2005.1469279

@article{6775403566154d33bbbb683d99c9828f,

title = "Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2",

abstract = "We demonstrate experimentally that the flatband/threshold voltages (V fb/V,) of pFET metal gates are strongly dependent on the post-deposition annealing conditions of the gate stacks. By varying the temperature and the O2 partial pressure during post-deposition N 2/O2 and/or forming gas annealing (FGA) with Re, Ru and Pt, the gate stack Vfb, can change by as much as 750 mV. However, using Re as an example, it is shown that conditions can be optimized and V fb/Vt-tuning for pFETs can be achieved for aggressively scaled stacks. It is proposed that charge transfer from oxygen vacancies to the gate electrode, possible only for high workfunction metal gates, leads to the formation of a dipole layer near the gate which can shift Vfb. The results indicate that Vfb/Vt control remains a formidable processing challenge with high workfunction metals on HfO2.",

author = "E. Cartier and McFeely, {F. R.} and V. Narayanan and P. Jamison and Linder, {B. P.} and M. Copel and Paruchuri, {V. K.} and Basker, {V. S.} and R. Haight and D. Lim and R. Carruthers and T. Shaw and M. Steen and J. Sleight and J. Rubino and H. Deligianni and S. Guha and R. Jammy and G. Shahidi",

year = "2005",

doi = "10.1109/.2005.1469279",

language = "English",

volume = "2005",

pages = "230--231",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Cartier, E, McFeely, FR, Narayanan, V, Jamison, P, Linder, BP, Copel, M, Paruchuri, VK, Basker, VS, Haight, R, Lim, D, Carruthers, R, Shaw, T, Steen, M, Sleight, J, Rubino, J, Deligianni, H, Guha, S, Jammy, R & Shahidi, G 2005, 'Role of oxygen vacancies in V_FB/V_t stability of pFET metals on HfO₂', Digest of Technical Papers - Symposium on VLSI Technology, vol. 2005, 1469279, pp. 230-231. https://doi.org/10.1109/.2005.1469279

TY - JOUR

T1 - Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2

AU - Cartier, E.

AU - McFeely, F. R.

AU - Narayanan, V.

AU - Jamison, P.

AU - Linder, B. P.

AU - Copel, M.

AU - Paruchuri, V. K.

AU - Basker, V. S.

AU - Haight, R.

AU - Lim, D.

AU - Carruthers, R.

AU - Shaw, T.

AU - Steen, M.

AU - Sleight, J.

AU - Rubino, J.

AU - Deligianni, H.

AU - Guha, S.

AU - Jammy, R.

AU - Shahidi, G.

PY - 2005

Y1 - 2005

N2 - We demonstrate experimentally that the flatband/threshold voltages (V fb/V,) of pFET metal gates are strongly dependent on the post-deposition annealing conditions of the gate stacks. By varying the temperature and the O2 partial pressure during post-deposition N 2/O2 and/or forming gas annealing (FGA) with Re, Ru and Pt, the gate stack Vfb, can change by as much as 750 mV. However, using Re as an example, it is shown that conditions can be optimized and V fb/Vt-tuning for pFETs can be achieved for aggressively scaled stacks. It is proposed that charge transfer from oxygen vacancies to the gate electrode, possible only for high workfunction metal gates, leads to the formation of a dipole layer near the gate which can shift Vfb. The results indicate that Vfb/Vt control remains a formidable processing challenge with high workfunction metals on HfO2.

AB - We demonstrate experimentally that the flatband/threshold voltages (V fb/V,) of pFET metal gates are strongly dependent on the post-deposition annealing conditions of the gate stacks. By varying the temperature and the O2 partial pressure during post-deposition N 2/O2 and/or forming gas annealing (FGA) with Re, Ru and Pt, the gate stack Vfb, can change by as much as 750 mV. However, using Re as an example, it is shown that conditions can be optimized and V fb/Vt-tuning for pFETs can be achieved for aggressively scaled stacks. It is proposed that charge transfer from oxygen vacancies to the gate electrode, possible only for high workfunction metal gates, leads to the formation of a dipole layer near the gate which can shift Vfb. The results indicate that Vfb/Vt control remains a formidable processing challenge with high workfunction metals on HfO2.

UR - http://www.scopus.com/inward/record.url?scp=33646866238&partnerID=8YFLogxK

U2 - 10.1109/.2005.1469279

DO - 10.1109/.2005.1469279

M3 - Conference article

AN - SCOPUS:33646866238

SN - 0743-1562

VL - 2005

SP - 230

EP - 231

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 1469279

T2 - 2005 Symposium on VLSI Technology

Y2 - 14 June 2005 through 14 June 2005

ER -

Role of oxygen vacancies in V_FB/V_t stability of pFET metals on HfO₂

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