Scaling-down effects on the electrical performance of top-contact pentacene TETs

Jong Duk Lee, Sung Hun Jin, Keum Dong Jung, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Top-contact pentacene TFTs were successfully scaled down to the level of Lc=1.8 ,μm by using silicon nitride membrane shadow mask. Pentacene TFT with the grain size of a few micrometer showed high off-current even in the depletion mode when Lc of pentacene TFT was reduced to the length less than 10 ,um. High mobility of 0.2 cm2/Vsec and good on-off current ratio more than 107 were obtained by using a two step deposition (TSD) technique even for the pentacene TFT with Lc=1.8 μm. The grain size plays a key role in determining the off-current level of top-contact pentacene TFTs with Lc less than 10 μm.

Original languageEnglish
Title of host publication2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Pages668-672
Number of pages5
Publication statusPublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur, Malaysia
Duration: 4 Dec 20049 Dec 2004

Publication series

NameProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

Conference

Conference2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Country/TerritoryMalaysia
CityKuala Lumpur
Period4/12/049/12/04

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