Selective formation of thickness-controlled fullerene disks by vapor-solid process

Seong Joon Ahn; Jieun Yang; Kwan Woo Lim; Hyeon Suk Shin

doi:10.1016/j.jcrysgro.2012.10.022

Selective formation of thickness-controlled fullerene disks by vapor-solid process

Seong Joon Ahn, Jieun Yang, Kwan Woo Lim, Hyeon Suk Shin

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Thin C₆₀ disks were selectively prepared without any solvent using a vapor-solid process. A tube furnace with three separate heating zones was used. Controlling the substrate temperature and the vapor temperature made the selective formation of the thin C₆₀ disks possible. The temperature of the first and second zones for evaporation of C₆₀ was fixed at 650°C, the temperature of the third zone at 500°C, and the temperature of the substrate between 150 and 300°C by water circulation through the sample stage. The thickness of the thin C₆₀ disks decreased as the substrate temperature increased in the range of 150-300°C. This occurred because the growth rate of a crystal increases as the difference between the evaporation temperature and the substrate temperature (crystallization temperature) of the fullerene increases.

Original language	English
Pages (from-to)	141-144
Number of pages	4
Journal	Journal of Crystal Growth
Volume	363
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.10.022
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work was supported by the WCU (World Class University) program ( R31-2008-000-20012-0 ), the Basic Science Research Program ( 2011-0013601 ), and the grant (Code no. 2011-0031630 ) from the Center for Advanced Soft Electronics under the Global Frontier Research Program through the National Research Foundation funded by MEST of Korea

Keywords

A1. Nanostructure
A2. Growth from vapor
A3. Chemical vapor deposition processes
B1. Fullerenes

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10.1016/j.jcrysgro.2012.10.022

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@article{9147a1f93ecc4e6e9055cf104be226b9,

title = "Selective formation of thickness-controlled fullerene disks by vapor-solid process",

abstract = "Thin C60 disks were selectively prepared without any solvent using a vapor-solid process. A tube furnace with three separate heating zones was used. Controlling the substrate temperature and the vapor temperature made the selective formation of the thin C60 disks possible. The temperature of the first and second zones for evaporation of C60 was fixed at 650°C, the temperature of the third zone at 500°C, and the temperature of the substrate between 150 and 300°C by water circulation through the sample stage. The thickness of the thin C60 disks decreased as the substrate temperature increased in the range of 150-300°C. This occurred because the growth rate of a crystal increases as the difference between the evaporation temperature and the substrate temperature (crystallization temperature) of the fullerene increases.",

keywords = "A1. Nanostructure, A2. Growth from vapor, A3. Chemical vapor deposition processes, B1. Fullerenes",

author = "Ahn, {Seong Joon} and Jieun Yang and Lim, {Kwan Woo} and Shin, {Hyeon Suk}",

note = "Funding Information: This work was supported by the WCU (World Class University) program ( R31-2008-000-20012-0 ), the Basic Science Research Program ( 2011-0013601 ), and the grant (Code no. 2011-0031630 ) from the Center for Advanced Soft Electronics under the Global Frontier Research Program through the National Research Foundation funded by MEST of Korea ",

year = "2013",

doi = "10.1016/j.jcrysgro.2012.10.022",

language = "English",

volume = "363",

pages = "141--144",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Selective formation of thickness-controlled fullerene disks by vapor-solid process

AU - Ahn, Seong Joon

AU - Yang, Jieun

AU - Lim, Kwan Woo

AU - Shin, Hyeon Suk

N1 - Funding Information: This work was supported by the WCU (World Class University) program ( R31-2008-000-20012-0 ), the Basic Science Research Program ( 2011-0013601 ), and the grant (Code no. 2011-0031630 ) from the Center for Advanced Soft Electronics under the Global Frontier Research Program through the National Research Foundation funded by MEST of Korea

PY - 2013

Y1 - 2013

N2 - Thin C60 disks were selectively prepared without any solvent using a vapor-solid process. A tube furnace with three separate heating zones was used. Controlling the substrate temperature and the vapor temperature made the selective formation of the thin C60 disks possible. The temperature of the first and second zones for evaporation of C60 was fixed at 650°C, the temperature of the third zone at 500°C, and the temperature of the substrate between 150 and 300°C by water circulation through the sample stage. The thickness of the thin C60 disks decreased as the substrate temperature increased in the range of 150-300°C. This occurred because the growth rate of a crystal increases as the difference between the evaporation temperature and the substrate temperature (crystallization temperature) of the fullerene increases.

AB - Thin C60 disks were selectively prepared without any solvent using a vapor-solid process. A tube furnace with three separate heating zones was used. Controlling the substrate temperature and the vapor temperature made the selective formation of the thin C60 disks possible. The temperature of the first and second zones for evaporation of C60 was fixed at 650°C, the temperature of the third zone at 500°C, and the temperature of the substrate between 150 and 300°C by water circulation through the sample stage. The thickness of the thin C60 disks decreased as the substrate temperature increased in the range of 150-300°C. This occurred because the growth rate of a crystal increases as the difference between the evaporation temperature and the substrate temperature (crystallization temperature) of the fullerene increases.

KW - A1. Nanostructure

KW - A2. Growth from vapor

KW - A3. Chemical vapor deposition processes

KW - B1. Fullerenes

UR - http://www.scopus.com/inward/record.url?scp=84888370172&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2012.10.022

DO - 10.1016/j.jcrysgro.2012.10.022

M3 - Article

AN - SCOPUS:84888370172

SN - 0022-0248

VL - 363

SP - 141

EP - 144

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Selective formation of thickness-controlled fullerene disks by vapor-solid process

Abstract

Bibliographical note

Keywords

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